JPH0442830B2 - - Google Patents
Info
- Publication number
- JPH0442830B2 JPH0442830B2 JP57010501A JP1050182A JPH0442830B2 JP H0442830 B2 JPH0442830 B2 JP H0442830B2 JP 57010501 A JP57010501 A JP 57010501A JP 1050182 A JP1050182 A JP 1050182A JP H0442830 B2 JPH0442830 B2 JP H0442830B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- wiring film
- type
- film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 85
- 239000012535 impurity Substances 0.000 claims description 61
- 238000009792 diffusion process Methods 0.000 claims description 57
- 239000011229 interlayer Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 46
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57010501A JPS58127348A (ja) | 1982-01-25 | 1982-01-25 | 大規模半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57010501A JPS58127348A (ja) | 1982-01-25 | 1982-01-25 | 大規模半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58127348A JPS58127348A (ja) | 1983-07-29 |
JPH0442830B2 true JPH0442830B2 (ko) | 1992-07-14 |
Family
ID=11751941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57010501A Granted JPS58127348A (ja) | 1982-01-25 | 1982-01-25 | 大規模半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58127348A (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60196966A (ja) * | 1984-03-21 | 1985-10-05 | Toshiba Corp | 相補型半導体装置 |
JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
JPH0695570B2 (ja) * | 1985-02-07 | 1994-11-24 | 三菱電機株式会社 | 半導体集積回路装置 |
JPS61248445A (ja) * | 1985-04-25 | 1986-11-05 | Nec Corp | 集積回路 |
JP2960428B2 (ja) * | 1988-12-28 | 1999-10-06 | 旭化成マイクロシステム株式会社 | スイッチアレイ用半導体装置の製造方法 |
JP2997479B2 (ja) * | 1989-06-12 | 2000-01-11 | 三菱電機株式会社 | ゲートアレイ |
JP4543061B2 (ja) | 2007-05-15 | 2010-09-15 | 株式会社東芝 | 半導体集積回路 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51146195A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Diode device |
-
1982
- 1982-01-25 JP JP57010501A patent/JPS58127348A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51146195A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Diode device |
Also Published As
Publication number | Publication date |
---|---|
JPS58127348A (ja) | 1983-07-29 |
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