JPH0441508B2 - - Google Patents
Info
- Publication number
- JPH0441508B2 JPH0441508B2 JP61138937A JP13893786A JPH0441508B2 JP H0441508 B2 JPH0441508 B2 JP H0441508B2 JP 61138937 A JP61138937 A JP 61138937A JP 13893786 A JP13893786 A JP 13893786A JP H0441508 B2 JPH0441508 B2 JP H0441508B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- type region
- insulating film
- opposite conductivity
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138937A JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138937A JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56170619A Division JPS57141955A (en) | 1981-10-23 | 1981-10-23 | Integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62115768A JPS62115768A (ja) | 1987-05-27 |
| JPH0441508B2 true JPH0441508B2 (enrdf_load_stackoverflow) | 1992-07-08 |
Family
ID=15233630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61138937A Granted JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115768A (enrdf_load_stackoverflow) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3740731A (en) * | 1971-08-02 | 1973-06-19 | Texas Instruments Inc | One transistor dynamic memory cell |
| US3740732A (en) * | 1971-08-12 | 1973-06-19 | Texas Instruments Inc | Dynamic data storage cell |
| DE2320195A1 (de) * | 1972-04-24 | 1973-12-13 | Standard Microsyst Smc | Durch ionenimplantation hergestellter speicherfeldeffekt-transistor mit siliciumbasis |
-
1986
- 1986-06-13 JP JP61138937A patent/JPS62115768A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62115768A (ja) | 1987-05-27 |
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