JPS62115768A - 集積回路装置 - Google Patents
集積回路装置Info
- Publication number
- JPS62115768A JPS62115768A JP61138937A JP13893786A JPS62115768A JP S62115768 A JPS62115768 A JP S62115768A JP 61138937 A JP61138937 A JP 61138937A JP 13893786 A JP13893786 A JP 13893786A JP S62115768 A JPS62115768 A JP S62115768A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- region
- conductivity type
- insulating film
- opposite conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000015654 memory Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 5
- 239000003595 mist Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138937A JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138937A JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56170619A Division JPS57141955A (en) | 1981-10-23 | 1981-10-23 | Integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62115768A true JPS62115768A (ja) | 1987-05-27 |
| JPH0441508B2 JPH0441508B2 (enrdf_load_stackoverflow) | 1992-07-08 |
Family
ID=15233630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61138937A Granted JPS62115768A (ja) | 1986-06-13 | 1986-06-13 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115768A (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| JPS4826039A (enrdf_load_stackoverflow) * | 1971-08-02 | 1973-04-05 | ||
| JPS4827643A (enrdf_load_stackoverflow) * | 1971-08-12 | 1973-04-12 | ||
| JPS4942286A (enrdf_load_stackoverflow) * | 1972-04-24 | 1974-04-20 |
-
1986
- 1986-06-13 JP JP61138937A patent/JPS62115768A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| JPS4826039A (enrdf_load_stackoverflow) * | 1971-08-02 | 1973-04-05 | ||
| JPS4827643A (enrdf_load_stackoverflow) * | 1971-08-12 | 1973-04-12 | ||
| JPS4942286A (enrdf_load_stackoverflow) * | 1972-04-24 | 1974-04-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0441508B2 (enrdf_load_stackoverflow) | 1992-07-08 |
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