JPH0434824B2 - - Google Patents
Info
- Publication number
- JPH0434824B2 JPH0434824B2 JP15778583A JP15778583A JPH0434824B2 JP H0434824 B2 JPH0434824 B2 JP H0434824B2 JP 15778583 A JP15778583 A JP 15778583A JP 15778583 A JP15778583 A JP 15778583A JP H0434824 B2 JPH0434824 B2 JP H0434824B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- film
- layer
- thin film
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15778583A JPS6050966A (ja) | 1983-08-31 | 1983-08-31 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15778583A JPS6050966A (ja) | 1983-08-31 | 1983-08-31 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050966A JPS6050966A (ja) | 1985-03-22 |
| JPH0434824B2 true JPH0434824B2 (US20110232667A1-20110929-C00004.png) | 1992-06-09 |
Family
ID=15657239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15778583A Granted JPS6050966A (ja) | 1983-08-31 | 1983-08-31 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050966A (US20110232667A1-20110929-C00004.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH079913B2 (ja) * | 1985-07-01 | 1995-02-01 | 日本電信電話株式会社 | 電界効果トランジスタの製造方法 |
| JPH0750781B2 (ja) * | 1987-03-18 | 1995-05-31 | 富士通株式会社 | 化合物半導体集積回路装置 |
-
1983
- 1983-08-31 JP JP15778583A patent/JPS6050966A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6050966A (ja) | 1985-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4712291A (en) | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs | |
| JPH0434824B2 (US20110232667A1-20110929-C00004.png) | ||
| JPH0436459B2 (US20110232667A1-20110929-C00004.png) | ||
| JPS61248570A (ja) | Ｍｅｓｆｅｔ装置およびその製造方法 | |
| JPS60144980A (ja) | 半導体装置 | |
| JPS62150888A (ja) | 電界効果トランジスタの製造方法 | |
| JPS59193070A (ja) | シヨツトキゲ−ト電界効果トランジスタの製造方法 | |
| JPS6272175A (ja) | 半導体装置の製造方法 | |
| JPS6050967A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6050965A (ja) | 電界効果トランジスタおよびその製造方法 | |
| JPS635571A (ja) | 化合物半導体装置 | |
| JPS6362114B2 (US20110232667A1-20110929-C00004.png) | ||
| JPS6070772A (ja) | 電界効果トランジスタの製造方法 | |
| JPS59194476A (ja) | 半導体装置の製造方法 | |
| JPH01189960A (ja) | 化合物半導体装置の製造方法 | |
| JPS5893290A (ja) | シヨツトキバリア電界効果トランジスタの製造方法 | |
| JPS6276780A (ja) | 半導体装置の製造方法 | |
| JPS6038883A (ja) | ショットキゲ−ト型ｆｅｔの製造方法 | |
| JPS59195874A (ja) | 電界効果トランジスタの製造方法 | |
| JPS6396965A (ja) | 半導体装置およびその製造方法 | |
| JPH04352333A (ja) | 半導体装置の製造方法 | |
| JPS6260268A (ja) | 電界効果トランジスタの製造方法 | |
| JPH03283627A (ja) | 電界効果型半導体装置の製造方法 | |
| JPS59113671A (ja) | 電界効果トランジスタの製造方法 | |
| JPH043102B2 (US20110232667A1-20110929-C00004.png) |
