JPH04340762A - メモリセル回路 - Google Patents
メモリセル回路Info
- Publication number
- JPH04340762A JPH04340762A JP3347004A JP34700491A JPH04340762A JP H04340762 A JPH04340762 A JP H04340762A JP 3347004 A JP3347004 A JP 3347004A JP 34700491 A JP34700491 A JP 34700491A JP H04340762 A JPH04340762 A JP H04340762A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- cell
- transistors
- gate
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000001568 sexual effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 55
- 210000004027 cell Anatomy 0.000 description 213
- 239000010410 layer Substances 0.000 description 50
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 15
- 230000003071 parasitic effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006880 cross-coupling reaction Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/636,518 US5287304A (en) | 1990-12-31 | 1990-12-31 | Memory cell circuit and array |
| US636518 | 1990-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04340762A true JPH04340762A (ja) | 1992-11-27 |
Family
ID=24552248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3347004A Pending JPH04340762A (ja) | 1990-12-31 | 1991-12-27 | メモリセル回路 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5287304A (OSRAM) |
| EP (1) | EP0493830B1 (OSRAM) |
| JP (1) | JPH04340762A (OSRAM) |
| KR (1) | KR100205669B1 (OSRAM) |
| DE (1) | DE69129404T2 (OSRAM) |
| TW (1) | TW222705B (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4501164B2 (ja) * | 1998-05-01 | 2010-07-14 | ソニー株式会社 | 半導体記憶装置 |
| JP2009177200A (ja) * | 1998-05-01 | 2009-08-06 | Sony Corp | 半導体記憶装置 |
| US6418490B1 (en) * | 1998-12-30 | 2002-07-09 | International Business Machines Corporation | Electronic circuit interconnection system using a virtual mirror cross over package |
| FR2871921A1 (fr) * | 2004-06-16 | 2005-12-23 | St Microelectronics Sa | Architecture de memoire a lignes d'ecriture segmentees |
| US7209383B2 (en) * | 2004-06-16 | 2007-04-24 | Stmicroelectronics, Inc. | Magnetic random access memory array having bit/word lines for shared write select and read operations |
| US7372728B2 (en) * | 2004-06-16 | 2008-05-13 | Stmicroelectronics, Inc. | Magnetic random access memory array having bit/word lines for shared write select and read operations |
| US7136298B2 (en) * | 2004-06-30 | 2006-11-14 | Stmicroelectronics, Inc. | Magnetic random access memory array with global write lines |
| US7106621B2 (en) * | 2004-06-30 | 2006-09-12 | Stmicroelectronics, Inc. | Random access memory array with parity bit structure |
| US7079415B2 (en) * | 2004-06-30 | 2006-07-18 | Stmicroelectronics, Inc. | Magnetic random access memory element |
| US7301800B2 (en) * | 2004-06-30 | 2007-11-27 | Stmicroelectronics, Inc. | Multi-bit magnetic random access memory element |
| US7465973B2 (en) * | 2004-12-03 | 2008-12-16 | International Business Machines Corporation | Integrated circuit having gates and active regions forming a regular grating |
| US10109637B1 (en) * | 2017-12-28 | 2018-10-23 | Globalfoundries Inc. | Cross couple structure for vertical transistors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611317A (en) * | 1970-02-02 | 1971-10-05 | Bell Telephone Labor Inc | Nested chip arrangement for integrated circuit memories |
| US3638202A (en) * | 1970-03-19 | 1972-01-25 | Bell Telephone Labor Inc | Access circuit arrangement for equalized loading in integrated circuit arrays |
| US4184208A (en) * | 1978-07-19 | 1980-01-15 | Texas Instruments Incorporated | Pseudo-static semiconductor memory cell |
| JPS60136097A (ja) * | 1983-12-23 | 1985-07-19 | Hitachi Ltd | 連想メモリ装置 |
-
1990
- 1990-12-31 US US07/636,518 patent/US5287304A/en not_active Expired - Lifetime
-
1991
- 1991-12-27 JP JP3347004A patent/JPH04340762A/ja active Pending
- 1991-12-30 EP EP91122374A patent/EP0493830B1/en not_active Expired - Lifetime
- 1991-12-30 DE DE69129404T patent/DE69129404T2/de not_active Expired - Fee Related
- 1991-12-30 KR KR1019910025486A patent/KR100205669B1/ko not_active Expired - Fee Related
-
1992
- 1992-04-28 TW TW081103297A patent/TW222705B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR920013465A (ko) | 1992-07-29 |
| DE69129404D1 (de) | 1998-06-18 |
| TW222705B (OSRAM) | 1994-04-21 |
| EP0493830A2 (en) | 1992-07-08 |
| DE69129404T2 (de) | 1998-10-29 |
| US5287304A (en) | 1994-02-15 |
| KR100205669B1 (ko) | 1999-07-01 |
| EP0493830A3 (en) | 1993-01-27 |
| EP0493830B1 (en) | 1998-05-13 |
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