TW222705B - - Google Patents

Info

Publication number
TW222705B
TW222705B TW081103297A TW81103297A TW222705B TW 222705 B TW222705 B TW 222705B TW 081103297 A TW081103297 A TW 081103297A TW 81103297 A TW81103297 A TW 81103297A TW 222705 B TW222705 B TW 222705B
Authority
TW
Taiwan
Application number
TW081103297A
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW222705B publication Critical patent/TW222705B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
TW081103297A 1990-12-31 1992-04-28 TW222705B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/636,518 US5287304A (en) 1990-12-31 1990-12-31 Memory cell circuit and array

Publications (1)

Publication Number Publication Date
TW222705B true TW222705B (zh) 1994-04-21

Family

ID=24552248

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081103297A TW222705B (zh) 1990-12-31 1992-04-28

Country Status (6)

Country Link
US (1) US5287304A (zh)
EP (1) EP0493830B1 (zh)
JP (1) JPH04340762A (zh)
KR (1) KR100205669B1 (zh)
DE (1) DE69129404T2 (zh)
TW (1) TW222705B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4501164B2 (ja) * 1998-05-01 2010-07-14 ソニー株式会社 半導体記憶装置
JP2009177200A (ja) * 1998-05-01 2009-08-06 Sony Corp 半導体記憶装置
US6418490B1 (en) * 1998-12-30 2002-07-09 International Business Machines Corporation Electronic circuit interconnection system using a virtual mirror cross over package
FR2871921A1 (fr) * 2004-06-16 2005-12-23 St Microelectronics Sa Architecture de memoire a lignes d'ecriture segmentees
US7209383B2 (en) * 2004-06-16 2007-04-24 Stmicroelectronics, Inc. Magnetic random access memory array having bit/word lines for shared write select and read operations
US7372728B2 (en) * 2004-06-16 2008-05-13 Stmicroelectronics, Inc. Magnetic random access memory array having bit/word lines for shared write select and read operations
US7136298B2 (en) * 2004-06-30 2006-11-14 Stmicroelectronics, Inc. Magnetic random access memory array with global write lines
US7079415B2 (en) * 2004-06-30 2006-07-18 Stmicroelectronics, Inc. Magnetic random access memory element
US7106621B2 (en) * 2004-06-30 2006-09-12 Stmicroelectronics, Inc. Random access memory array with parity bit structure
US7301800B2 (en) * 2004-06-30 2007-11-27 Stmicroelectronics, Inc. Multi-bit magnetic random access memory element
US7465973B2 (en) * 2004-12-03 2008-12-16 International Business Machines Corporation Integrated circuit having gates and active regions forming a regular grating
US10109637B1 (en) * 2017-12-28 2018-10-23 Globalfoundries Inc. Cross couple structure for vertical transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611317A (en) * 1970-02-02 1971-10-05 Bell Telephone Labor Inc Nested chip arrangement for integrated circuit memories
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US4184208A (en) * 1978-07-19 1980-01-15 Texas Instruments Incorporated Pseudo-static semiconductor memory cell
JPS60136097A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 連想メモリ装置

Also Published As

Publication number Publication date
EP0493830B1 (en) 1998-05-13
DE69129404D1 (de) 1998-06-18
EP0493830A3 (en) 1993-01-27
KR100205669B1 (ko) 1999-07-01
KR920013465A (ko) 1992-07-29
JPH04340762A (ja) 1992-11-27
DE69129404T2 (de) 1998-10-29
US5287304A (en) 1994-02-15
EP0493830A2 (en) 1992-07-08

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