JPH0433130B2 - - Google Patents

Info

Publication number
JPH0433130B2
JPH0433130B2 JP58144969A JP14496983A JPH0433130B2 JP H0433130 B2 JPH0433130 B2 JP H0433130B2 JP 58144969 A JP58144969 A JP 58144969A JP 14496983 A JP14496983 A JP 14496983A JP H0433130 B2 JPH0433130 B2 JP H0433130B2
Authority
JP
Japan
Prior art keywords
silicon oxide
tungsten
oxide film
molybdenum
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58144969A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6037123A (ja
Inventor
Nobuyoshi Kobayashi
Shojiro Sugashiro
Seiichi Iwata
Naoki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58144969A priority Critical patent/JPS6037123A/ja
Publication of JPS6037123A publication Critical patent/JPS6037123A/ja
Publication of JPH0433130B2 publication Critical patent/JPH0433130B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58144969A 1983-08-10 1983-08-10 半導体装置の製造方法 Granted JPS6037123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58144969A JPS6037123A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58144969A JPS6037123A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6037123A JPS6037123A (ja) 1985-02-26
JPH0433130B2 true JPH0433130B2 (OSRAM) 1992-06-02

Family

ID=15374402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58144969A Granted JPS6037123A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6037123A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0789549B2 (ja) * 1985-03-18 1995-09-27 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6037123A (ja) 1985-02-26

Similar Documents

Publication Publication Date Title
US4464701A (en) Process for making high dielectric constant nitride based materials and devices using the same
JPH0458688B2 (OSRAM)
JPS58220457A (ja) 誘電体材料の形成方法
JP2002203914A (ja) ２段階熱処理による半導体メモリ素子のキャパシタ製造方法
US5360768A (en) Method of forming oxide film
JP3420876B2 (ja) ＳｉＣの熱酸化膜の改善方法
JPS623976B2 (OSRAM)
JPH0433130B2 (OSRAM)
Cohen Electrical Properties of Post‐annealed Thin SiO2 Films
JPS59103347A (ja) シリコン層上に２酸化シリコンの絶縁誘電体層を有する半導体装置とその製造法
Shiono et al. Kinetics of Changes in N f and D it at the Si‐SiO2 Interface under Long‐Term Positive as well as Negative Bias‐Temperature Aging
KR100339873B1 (ko) 반도체장치및그제조방법
JP2002064093A (ja) 半導体基板表面の酸化膜形成方法および半導体装置の製造方法
TW200304184A (en) Semiconductor device and production method therefor
JPS61216331A (ja) 乾燥酸素雰囲気中におけるポリサイド層を有する基板の熱酸化方法
Murase et al. Thermal oxidation of amorphous silicon-germanium-boron alloy
JP3050220B1 (ja) 部分的に酸化されている表面を持つシリコン基板及びその製造方法
JP2645811B2 (ja) 拡散バリヤ機能を有する半導体素子の電極形成方法
JPH0433129B2 (OSRAM)
JPH043668B2 (OSRAM)
JPH05235265A (ja) 半導体装置の製造方法
JPS59188957A (ja) 半導体装置用キヤパシタの製造方法
JP2939873B2 (ja) ガス検出素子の製造法
JPH033357A (ja) 半導体装置
JPH07142470A (ja) 絶縁膜形成方法