JPH04326575A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPH04326575A
JPH04326575A JP9651291A JP9651291A JPH04326575A JP H04326575 A JPH04326575 A JP H04326575A JP 9651291 A JP9651291 A JP 9651291A JP 9651291 A JP9651291 A JP 9651291A JP H04326575 A JPH04326575 A JP H04326575A
Authority
JP
Japan
Prior art keywords
input
buffer
output
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9651291A
Other languages
Japanese (ja)
Inventor
Masahiro Harayama
原山 政弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP9651291A priority Critical patent/JPH04326575A/en
Publication of JPH04326575A publication Critical patent/JPH04326575A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To minimize the space unused or unnecessary for an input/output circuit so as to reduce the occupancy of the input/output circuit in whole chip space by fitting bonding pads corresponding to respective input buffer and output buffer in each input/output circuit for the integrated circuit device. CONSTITUTION:An input/output circuit 1 composed of an input buffer 11 and an output buffer 12 for interface is formed on a semiconductor chip 6 comprising basic cells such as a gate circuit, etc., and bonding pads 2 and 3 are placed in a manner to correspond to the buffer 11 and the buffer 12 respectively. These pads 2 and 3 function as electrodes for electrical connections such as the external terminals of leads and others, and the internal circuit on the chip 6. Furthermore, the number of pads used as the pad 2 is one and it is arranged for the buffer 11 of the circuit 1 and is connected electrically using a bonding wire 4. On the other hand, the number of pads used as the pad 3 is one and it is arranged for the buffer 12 and is connected electrically using a bonding wire 5.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は集積回路装置に関し、特
にマスタスライス方式の集積回路装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit device, and more particularly to a master slice type integrated circuit device.

【0002】0002

【従来の技術】従来のこの種の集積回路装置は、図3に
示すように、ゲート回路等の基本セルを形成した半導体
チップ6上に、内部と外部とのインタフェース用の入力
バッファ71と出力バッファ72とからなる入出力回路
7と、対応するボンデイングパッド2とを備えて構成さ
れていた。ボンデイングパッド2は、リード等の外部端
子と半導体チップ4上の内部回路との電気的接続用の電
極である。
2. Description of the Related Art As shown in FIG. 3, a conventional integrated circuit device of this type includes an input buffer 71 for interfacing between the inside and the outside, and an output buffer 71 on a semiconductor chip 6 on which basic cells such as gate circuits are formed. The input/output circuit 7 includes a buffer 72 and a corresponding bonding pad 2. The bonding pad 2 is an electrode for electrical connection between an external terminal such as a lead and an internal circuit on the semiconductor chip 4.

【0003】ボンデイングパッド2は、入出力回路7の
1組に対し1つ配置されている。回路構成に対応して入
力バッファ71あるいは出力バッファ72のいずれかを
選択し、対応するボンデイングパッド2にボンデイング
ワイヤ4により電気的接続することにより入力回路ある
いは出力回路のどちらでも構成できるというものであっ
た。
One bonding pad 2 is arranged for one set of input/output circuits 7. By selecting either the input buffer 71 or the output buffer 72 according to the circuit configuration and electrically connecting it to the corresponding bonding pad 2 with the bonding wire 4, either the input circuit or the output circuit can be configured. Ta.

【0004】一般的に、入力バッファ71に比較して、
出力バッファ72は大電流を扱うので構成トランジスタ
のサイズや使用個数も約3倍と大きくなっている。図3
の例では、入力バッファ71の長さが約0.2mmに対
し、出力バッファ72の長さは約0.8mmであり、し
たがって、入出力回路7の長さは約1mmとなっていた
Generally, compared to the input buffer 71,
Since the output buffer 72 handles a large current, the size and number of constituent transistors used are approximately three times larger. Figure 3
In this example, the length of the input buffer 71 is about 0.2 mm, while the length of the output buffer 72 is about 0.8 mm, so the length of the input/output circuit 7 is about 1 mm.

【0005】ここで、この種の集積回路装置における入
出力回路の使用比率の一例を示すと、入力バッファ71
の40%に対し、出力バッファ72の60%である。す
なわち、入力バッファ71の60%と出力バッファ72
の40%が未使用の無駄な領域となっていた。
Here, an example of the usage ratio of input/output circuits in this type of integrated circuit device is as follows:
40% of the output buffer 72 compared to 60% of the output buffer 72. That is, 60% of input buffer 71 and output buffer 72
40% of the area was unused and wasted space.

【0006】[0006]

【発明が解決しようとする課題】上述した従来の集積回
路装置は、外部端子に対する電気的接続用のボンデイン
グパッドは、入出力回路の1組に対し1つ配置されてい
るだけなので、使用しない方のバッフアは、そのまま放
置され、半導体チップ上において無駄な領域となるため
、チップ全体に対す入出力回路の占める面積が大きくな
りチップサイズが拡大するという欠点を有している。
[Problems to be Solved by the Invention] In the conventional integrated circuit device described above, only one bonding pad for electrical connection to external terminals is arranged for one set of input/output circuits, so it is preferable not to use it. If the buffer is left as it is, it becomes a wasted area on the semiconductor chip, so it has the disadvantage that the input/output circuit occupies a large area with respect to the entire chip, increasing the chip size.

【0007】[0007]

【課題を解決するための手段】本発明の集積回路装置は
、半導体チップ上に予め形成された複数の基本セルと、
入力バッファと出力バッファとからなる複数の入出力回
路とを備えるマスタスライス方式の集積回路装置におい
て、それぞれの前記入出力回路の前記入力バッファと前
記出力バッファとにそれぞれ対応するボンデイングパッ
ドを備えて構成されている。
[Means for Solving the Problems] An integrated circuit device of the present invention includes a plurality of basic cells formed in advance on a semiconductor chip,
A master slice type integrated circuit device comprising a plurality of input/output circuits each including an input buffer and an output buffer, comprising bonding pads respectively corresponding to the input buffer and the output buffer of each of the input/output circuits. has been done.

【0008】[0008]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

【0009】図1は本発明の集積回路装置の一実施例を
示す部分平面図である。
FIG. 1 is a partial plan view showing an embodiment of the integrated circuit device of the present invention.

【0010】本実施例の集積回路装置は、図1に示すよ
うに、ゲート回路等の基本セルを形成した半導体チップ
6上に、内部と外部とのインタフェース用の入力バッフ
ァ11と出力バッファ12とからなる入出力回路1と、
入力バッファ11と出力バッファ12にそれぞれ対応す
るボンデイングパッド2,3とを備えて構成されている
。ボンデイングパッド2,3は、リード等の外部端子と
半導体チップ6上の内部回路との電気的接続用の電極で
ある。
As shown in FIG. 1, the integrated circuit device of this embodiment has an input buffer 11 and an output buffer 12 for interfacing between the inside and the outside on a semiconductor chip 6 on which basic cells such as gate circuits are formed. an input/output circuit 1 consisting of;
It is configured to include bonding pads 2 and 3 corresponding to an input buffer 11 and an output buffer 12, respectively. The bonding pads 2 and 3 are electrodes for electrical connection between external terminals such as leads and internal circuits on the semiconductor chip 6.

【0011】ボンデイングパッド2は、入出力回路1の
入力バッファ11に対し1つ配置されており、ボンデイ
ングワイヤ4により電気的接続される。また、ボンデイ
ングッド3は、入出力回路1の出力バッファ12に対し
1つ配置されており、ボンデイングワイヤ5により電気
的接続される。
One bonding pad 2 is arranged for each input buffer 11 of the input/output circuit 1, and is electrically connected by a bonding wire 4. Further, one bonding good 3 is arranged for each output buffer 12 of the input/output circuit 1, and is electrically connected to it by a bonding wire 5.

【0012】図1に示すように、入出力回路1を2つの
ボンデイングパッド2,3に正対するように配置する場
合は、従来例の1つのボンデイングパッドに対する場合
に比して間口の寸法を約2倍に大きくできるので、所要
面積が同一の場合はその分だけ、すなわち、約1/2に
長さ方向の寸法を低減できる。
As shown in FIG. 1, when the input/output circuit 1 is placed directly opposite the two bonding pads 2 and 3, the width of the frontage is approximately 100% smaller than that of the conventional case where the input/output circuit 1 is placed directly opposite the two bonding pads 2 and 3. Since the size can be doubled, if the required area is the same, the lengthwise dimension can be reduced by that amount, that is, about 1/2.

【0013】ここで、入出力回路の使用比率を従来例の
場合と同様に、入力バッファの40%に対し、出力バッ
ファが60%であるとすると、図1のように、入出力が
1:1の場合は、入出回路1の3組ごとに、入力バッフ
ァ11の1つが未使用になる。すなわち、入力バッファ
11の未使用率は33%、また、出力回路12の未使用
率は0%ととなる。これは、従来例の入力バッファの6
0%と出力バッファの40%の未使用率に比して大幅な
改善といえる。
Assuming that the usage ratio of the input/output circuits is 40% for the input buffer and 60% for the output buffer, as in the conventional example, the input/output is 1:1 as shown in FIG. In the case of 1, one input buffer 11 becomes unused for every three sets of input/output circuits 1. That is, the unused rate of the input buffer 11 is 33%, and the unused rate of the output circuit 12 is 0%. This is the 6th input buffer of the conventional example.
This is a significant improvement compared to the unused rate of 0% and 40% of the output buffer.

【0014】次に、本発明の第二の実施例について説明
する。
Next, a second embodiment of the present invention will be explained.

【0015】図2は本発明の集積回路装置の第二の実施
例を示す部分平面図である。
FIG. 2 is a partial plan view showing a second embodiment of the integrated circuit device of the present invention.

【0016】図2に示す本実施例の図1に示した第一の
実施例との相違点は、入出力回路8が、第一の実施例に
おける出力バッファ12に加えて第二の出力バッファ1
3を有すること、これに対応して、ボンデイングパッド
9と、ボンデイングワイヤ10が加えられたことである
The difference between the present embodiment shown in FIG. 2 and the first embodiment shown in FIG. 1 is that the input/output circuit 8 includes a second output buffer in addition to the output buffer 12 in the first embodiment. 1
3, and correspondingly, a bonding pad 9 and a bonding wire 10 are added.

【0017】ここで、入出力回路の使用比率を第一の実
施例および従来例の場合と同様に、入力バッファの40
%に対し、出力バッファが60%であるとする。図1に
示す第一の実施例の入出力回路2つと、図2に示す第二
の実施例の入出力回路2つとを組合せることにより、入
力バッファおよび出力バッファ共、未使用率は0%とな
る。したがって、無駄な領域がない半導体チップを構成
できるという利点がある。
Here, the usage ratio of the input/output circuits is set to 40% of the input buffer as in the first embodiment and the conventional example.
% and the output buffer is 60%. By combining the two input/output circuits of the first embodiment shown in FIG. 1 and the two input/output circuits of the second embodiment shown in FIG. 2, the unused rate of both the input buffer and the output buffer is 0%. becomes. Therefore, there is an advantage that a semiconductor chip with no wasted area can be constructed.

【0018】[0018]

【発明の効果】以上説明したように、本発明の集積回路
装置は、それぞれの入出力回路の入力バッファと出力バ
ッファとにそれぞれ対応するボンデイングパッドを備え
ることにより、入出力回路における未使用の無駄な領域
の発生を低減できるので、チップ全体に対する入出力回
路の占める面積を小さくでき、したがって、チップサイ
ズの拡大を抑制できるという効果を有している。
As explained above, the integrated circuit device of the present invention is provided with bonding pads corresponding to the input buffer and output buffer of each input/output circuit, thereby reducing unused waste in the input/output circuit. Since the occurrence of such areas can be reduced, the area occupied by the input/output circuits relative to the entire chip can be reduced, which has the effect of suppressing the increase in chip size.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の集積回路装置の一実施例を示す部分平
面図である。
FIG. 1 is a partial plan view showing an embodiment of an integrated circuit device of the present invention.

【図2】本発明の集積回路装置の第二の実施例を示す部
分平面図である。
FIG. 2 is a partial plan view showing a second embodiment of the integrated circuit device of the present invention.

【図3】従来の集積回路装置の一例を示す部分平面図で
ある。
FIG. 3 is a partial plan view showing an example of a conventional integrated circuit device.

【符号の説明】[Explanation of symbols]

1,7,8    入出力回路 2,3,9    ボンデイングパッド4,5,10 
   ボンデイングワイヤ6    半導体チップ 11,71    入力バッファ
1, 7, 8 Input/output circuit 2, 3, 9 Bonding pad 4, 5, 10
Bonding wire 6 Semiconductor chip 11, 71 Input buffer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  半導体チップ上に予め形成された複数
の基本セルと、入力バッファと出力バッファとからなる
複数の入出力回路とを備えるマスタスライス方式の集積
回路装置において、それぞれの前記入出力回路の前記入
力バッファと前記出力バッファとにそれぞれ対応するボ
ンデイングパッドを備えることを特徴とする集積回路装
置。
1. A master slice type integrated circuit device comprising a plurality of basic cells formed in advance on a semiconductor chip and a plurality of input/output circuits each including an input buffer and an output buffer, wherein each of the input/output circuits An integrated circuit device comprising bonding pads corresponding to the input buffer and the output buffer, respectively.
JP9651291A 1991-04-26 1991-04-26 Integrated circuit device Pending JPH04326575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9651291A JPH04326575A (en) 1991-04-26 1991-04-26 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9651291A JPH04326575A (en) 1991-04-26 1991-04-26 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPH04326575A true JPH04326575A (en) 1992-11-16

Family

ID=14167187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9651291A Pending JPH04326575A (en) 1991-04-26 1991-04-26 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPH04326575A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107650A (en) * 1994-02-21 2000-08-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
JP2001067864A (en) * 1999-08-31 2001-03-16 Hitachi Ltd Semiconductor device
JP2012094909A (en) * 2012-02-01 2012-05-17 Rohm Co Ltd Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107650A (en) * 1994-02-21 2000-08-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6331466B1 (en) 1994-02-21 2001-12-18 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
JP2001067864A (en) * 1999-08-31 2001-03-16 Hitachi Ltd Semiconductor device
JP2012094909A (en) * 2012-02-01 2012-05-17 Rohm Co Ltd Semiconductor integrated circuit device

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