JPH05243533A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH05243533A
JPH05243533A JP3999192A JP3999192A JPH05243533A JP H05243533 A JPH05243533 A JP H05243533A JP 3999192 A JP3999192 A JP 3999192A JP 3999192 A JP3999192 A JP 3999192A JP H05243533 A JPH05243533 A JP H05243533A
Authority
JP
Japan
Prior art keywords
internal cell
functional block
power consumption
wiring
type functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3999192A
Other languages
Japanese (ja)
Inventor
Yasumi Konno
康己 金野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP3999192A priority Critical patent/JPH05243533A/en
Publication of JPH05243533A publication Critical patent/JPH05243533A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To make an internal automatic wiring region large without increasing a chip size CONSTITUTION:An internal cell array 1 for a low-power consuming type functional block arrangement is arranged inside of a semiconductor chip 70 and an internal cell array 2 for a high-power consuming type functional block arrangement is arranged on the input/output external block 5 side. On the outside thereof, an input/output external cell 5 and an external pad 4 are arrayed. A power supply wiring 3 is arranged on the periphery of the chip 70 to supply internal cell arrays 1, 2 with electric power. And in the internal cell arrays 1, 2, the power supply wiring 3 has a width which meets the respective consumed powers, so that the width of a wiring 7 on the internal cell 1 for the low-power consuming type functional block arrangement is small and the width of a wiring 6 on the internal cell 2 for a high-power consuming type functional block arrangement is large.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路装置に関
し、特にマスタースライス方式半導体集積回路装置の内
部セルアレイ電源配線に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, and more particularly to an internal cell array power supply wiring of a master slice type semiconductor integrated circuit device.

【0002】[0002]

【従来の技術】従来のマスタースライス方式半導体集積
回路装置の内部セルは、セルアレイ内に配置配線される
機能ブロックの種類,配置位置,配置数によらず、配線
抵抗による電位シフト量を保証する配線幅の電源配線を
有している。
2. Description of the Related Art An internal cell of a conventional master slice type semiconductor integrated circuit device is a wiring that guarantees a potential shift amount due to a wiring resistance, regardless of the type, position and number of functional blocks arranged and wired in a cell array. It has a width of power wiring.

【0003】このような従来の半導体集積回路装置を、
図5,図6に示す。
Such a conventional semiconductor integrated circuit device is
5 and 6 show.

【0004】図5において、本半導体チップ50は、低
消費電力高消費電力兼用型機能ブロック用内部セルアレ
イ36上の格子状の電源配線40が幅広くしめており、
この周囲に電源配線37があり、その外側に多数の外部
パッド38が配列されている。また、入出力外部セル3
9も配列されている。
In FIG. 5, the semiconductor chip 50 has a wide grid-like power supply wiring 40 on the internal cell array 36 for low power consumption / high power consumption / functional block.
A power supply wiring 37 is provided around this, and a large number of external pads 38 are arranged on the outside thereof. In addition, the input / output external cell 3
9 are also arranged.

【0005】図6において、本半導体チップ60は、低
消費電力高消費電力兼用型機能ブロック用内部セルアレ
イ41上の平行線状の電源配線があり、この周囲に、電
源配線42,入出力外部セル44,外部パッド43が配
列されている。
In FIG. 6, the present semiconductor chip 60 has parallel line-shaped power supply lines on the internal cell array 41 for low power consumption / high power consumption / functional block, around which power supply lines 42 and input / output external cells are provided. 44 and the external pad 43 are arranged.

【0006】[0006]

【発明が解決しようとする課題】この従来のマスタース
ライス方式半導体集積回路装置の内部セル電源配線4
0,45は、全内部セルアレイ行列に高消費電力型機能
セルを配置した場合にも配線抵抗による電源電位シフト
量を保証できる電源配線幅としなければならず、このた
めには内部セル当りの電源配線40,45の領域を大き
くとる必要があり、セルサイズを大きくするか、あるい
は自動配線領域を小さくしなければならないという問題
点があった。
The internal cell power supply wiring 4 of this conventional master slice type semiconductor integrated circuit device.
0 and 45 must have power supply wiring widths that can guarantee the amount of power supply potential shift due to wiring resistance even when high power consumption type functional cells are arranged in the entire internal cell array matrix. There is a problem in that it is necessary to increase the area of the wirings 40 and 45, and it is necessary to increase the cell size or reduce the automatic wiring area.

【0007】本発明の目的は、前記問題点を解決し、電
源配線領域を大きくせずに済むようにした半導体集積回
路装置を提供することにある。
It is an object of the present invention to provide a semiconductor integrated circuit device which solves the above problems and does not require a large power supply wiring area.

【0008】[0008]

【課題を解決するための手段】本発明の半導体集積回路
装置の構成は、半導体チップの内側に低消費電力の機能
ブロックが配置される第1の内部セルを配置し、前記内
側の外側にある入出力外部セルに高消費電力の機能ブロ
ックが配置される第2の内部セルを配置したことを特徴
とする。
According to the structure of a semiconductor integrated circuit device of the present invention, a first internal cell having a low power consumption functional block is arranged inside a semiconductor chip, and the first internal cell is outside the inside. A second internal cell in which a functional block of high power consumption is arranged is arranged in the input / output external cell.

【0009】[0009]

【実施例】図1は本発明の第1の実施例の半導体集積回
路装置を示す平面図である。
1 is a plan view showing a semiconductor integrated circuit device according to a first embodiment of the present invention.

【0010】図1において、本実施例の半導体集積回路
装置は、半導体チップ70の内側に、低消費電力型機能
ブロック配置用内部セルアレイ1,入出力外部ブロック
5側に高消費電力型機能ブロック配置用内部セルアレイ
2を配置する。その外側に、入出力外部セル5,外部パ
ッド4が配列される。電源配線3は、チップ70を周回
し、内部セルアレイ1,2に供給する。
In FIG. 1, the semiconductor integrated circuit device according to the present embodiment has a low power consumption type functional block arrangement internal cell array 1 inside a semiconductor chip 70, and a high power consumption type functional block arrangement on the input / output external block 5 side. The internal cell array 2 for use is arranged. Input / output external cells 5 and external pads 4 are arranged on the outside thereof. The power supply wiring 3 circulates around the chip 70 and supplies it to the internal cell arrays 1 and 2.

【0011】また、前記電源配線3は、内部セルアレイ
1,2において、それぞれ消費電力に見合った配線幅,
いわゆる低消費電力型機能ブロック配置用内部セル1上
は配線7幅は小さく、高消費電力型機能ブロック配置用
内部セル2上は配線6の幅が大となる。
In the internal cell arrays 1 and 2, the power supply wiring 3 has a wiring width corresponding to the power consumption,
The width of the wiring 7 is small on the so-called low power consumption type functional block layout internal cell 1, and the width of the wiring 6 is large on the high power consumption type functional block layout internal cell 2.

【0012】内部セル領域上の電源配線面積は低消費電
力型と高消費電力型との電力比が1対2,内部セル使用
率が50%対50%のとき、従来の半導体集積回路の2
分の1となり、従来の電源配線が内部セルアレイ領域に
占める割り合が30%であるが、これよりも自動配線領
域が15%増加する。
When the power ratio of the low power consumption type and the high power consumption type is 1: 2 and the internal cell usage rate is 50%: 50%, the power supply wiring area on the internal cell region is 2 of the conventional semiconductor integrated circuit.
This is one-third, and the conventional power supply wiring occupies 30% of the internal cell array area, but the automatic wiring area is increased by 15%.

【0013】このように、本実施例の半導体集積回路装
置の構成は、チップ内側に低消費電力の機能ブロック用
の内部セルアレイ、入出力外部セル側に高消費電力型機
能ブロック用の内部セルアレイを各々配置し、前記内部
セルアレイ上の電源配線幅を前記消費電力別に備えてい
ることを特徴とする。
As described above, the structure of the semiconductor integrated circuit device of this embodiment has an internal cell array for low power consumption functional blocks on the inside of the chip and an internal cell array for high power consumption type functional blocks on the input / output external cell side. Each of them is arranged, and a power supply wiring width on the internal cell array is provided for each power consumption.

【0014】図2は本発明の第2の実施例の平面図であ
る。
FIG. 2 is a plan view of the second embodiment of the present invention.

【0015】図2において、本実施例の半導体チップ7
1は、低消費電力型機能ブロック用内部セルアレイ8の
上下辺に高消費電力型機能ブロック用内部セルアレイ
9,10があり、その周囲に電源配線11,入出力外部
セル13,外部パッド12が配列されている。ここで、
電源配線14の幅は、電源配線15よりも広い。その効
果は、図1の場合と同様である。
In FIG. 2, the semiconductor chip 7 of this embodiment is shown.
1 has internal cell arrays 9 and 10 for a high power consumption type functional block on the upper and lower sides of an internal cell array 8 for a low power consumption type functional block, around which a power supply wiring 11, an input / output external cell 13 and an external pad 12 are arranged. Has been done. here,
The width of the power supply wiring 14 is wider than that of the power supply wiring 15. The effect is the same as in the case of FIG.

【0016】図3は本発明の第3の実施例の平面図であ
る。
FIG. 3 is a plan view of the third embodiment of the present invention.

【0017】図3において、本実施例の半導体チップ7
2は、低消費電力型機能ブロック用内部セルアレイ16
と、その周囲の中間消費電力型機能ブロック用内部セル
アレイ17と、その周囲の高消費電力型機能ブロック用
内部セルアレイ18と、入出力外部セル21と、外部パ
ッド20と、電源配線19とを備えている。その効果は
前記実施例と同様である。
In FIG. 3, the semiconductor chip 7 of this embodiment is shown.
2 is an internal cell array 16 for low power consumption type functional blocks
An internal cell array 17 for intermediate power consumption type functional blocks around it, an internal cell array 18 for high power consumption type functional blocks around it, an input / output external cell 21, an external pad 20, and a power supply wiring 19. ing. The effect is similar to that of the above embodiment.

【0018】図4は本発明の第4の実施例の平面図であ
る。
FIG. 4 is a plan view of the fourth embodiment of the present invention.

【0019】図4において、本実施例の半導体チップ7
3は、低消費電力型機能ブロック用内部セルアレイ25
と、その上下辺の中間消費電力型機能ブロック用内部セ
ルアレイ26,27と、さらにその上下辺の高消費電力
型機能ブロック用内部セルアレイ28,29と、入出力
外部セル32と、外部パッド31と、電源配線30とを
備えている。その効果は、前記実施例と同様である。
In FIG. 4, the semiconductor chip 7 of this embodiment is shown.
3 is an internal cell array 25 for low power consumption type functional block
And intermediate power consumption type functional block internal cell arrays 26 and 27 on the upper and lower sides thereof, and high power consumption type functional block internal cell arrays 28 and 29 on the upper and lower sides thereof, an input / output external cell 32, and an external pad 31. , And power supply wiring 30. The effect is similar to that of the above embodiment.

【0020】[0020]

【発明の効果】以上説明したように、本発明は、チップ
内側に低消費電力型機能ブロック配置用内部セルアレ
イ,入出力外部セル側に高消費電力型機能ブロック配置
用内部セルアレイを少なくとも配置し、内部セルへの電
源供給配線幅を電源供給に見合った配線幅としたので、
チップサイズを大きくすることなく、内部自動配線領域
が大きくとることができるという効果を有し、また機能
ブロックの消費電力の種類が多種類ある場合も、内部セ
ルアレイ上の電源配線幅を消費電力種類分用意すること
により、同様の効果が得られる。
As described above, according to the present invention, at least the low power consumption type functional block arranging internal cell array is arranged inside the chip, and the high power consumption type functional block arranging internal cell array is arranged at the input / output external cell side. Since the width of the power supply wiring to the internal cells was set to the wiring width suitable for the power supply,
It has the effect that the internal automatic wiring area can be made large without increasing the chip size. Also, even if there are many types of power consumption of the functional block, the power wiring width on the internal cell array can be set to the power consumption type. The same effect can be obtained by preparing the parts.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の半導体集積回路装置を
示す平面図である。
FIG. 1 is a plan view showing a semiconductor integrated circuit device according to a first embodiment of the present invention.

【図2】本発明の第2の実施例の平面図である。FIG. 2 is a plan view of a second embodiment of the present invention.

【図3】本発明の第3の実施例の平面図である。FIG. 3 is a plan view of a third embodiment of the present invention.

【図4】本発明の第4の実施例の平面図である。FIG. 4 is a plan view of a fourth embodiment of the present invention.

【図5】従来の半導体チップの一例を示す平面図であ
る。
FIG. 5 is a plan view showing an example of a conventional semiconductor chip.

【図6】従来の半導体チップの他例を示す平面図であ
る。
FIG. 6 is a plan view showing another example of a conventional semiconductor chip.

【符号の説明】[Explanation of symbols]

1,8,16,25 低消費電力型機能ブロック用内
部セルアレイ 2,9,10,18,28,29 高消費電力型機能
ブロック用内部セルアレイ 17,26,27 中間消費電力型機能ブロック用内
部セルアレイ 36,41 低消費電力高消費電力兼用型機能ブロッ
ク用内部セルアレイ 3,11,19,30,37,42 電源配線 4,12,20,31,38,43 外部パッド 5,13,21,32,39,44 入出力外部セル 6,14,22,33 高消費電力型機能ブロック用
内部セルアレイ上電源配線 7,15,24,35 低消費電力型機能ブロック用
内部セルアレイ上電源配線 23,34 中間消費電力型機能ブロック用内部セル
アレイ上電源配線 40,45 低消費電力高消費電力兼用型機能ブロッ
ク用内部セルアレイ上電源配線
1,8,16,25 Low power consumption type functional block internal cell array 2,9,10,18,28,29 High power consumption type functional block internal cell array 17,26,27 Intermediate power consumption type functional block internal cell array 36,41 Low power consumption High power consumption dual-purpose function block internal cell array 3,11,19,30,37,42 Power supply wiring 4,12,20,31,38,43 External pad 5,13,21,32, 39,44 Input / output external cells 6,14,22,33 Power wiring on internal cell array for high power consumption type functional block 7,15,24,35 Power supply wiring on internal cell array for low power consumption type functional block 23,34 Intermediate consumption Power supply on internal cell array for power type functional block 40, 45 Low power consumption High power consumption Internal power supply on internal cell array for dual function block

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップの内側に低消費電力の機能
ブロックが配置される第1の内部セルを配置し、前記内
側の外側にある入出力外部セルに高消費電力の機能ブロ
ックが配置される第2の内部セルを配置したことを特徴
とする半導体集積回路装置。
1. A first internal cell in which a low power consumption functional block is disposed inside a semiconductor chip, and a high power consumption functional block is disposed in an input / output external cell outside the inside. A semiconductor integrated circuit device in which a second internal cell is arranged.
【請求項2】 第1の内部セルと第2の内部セルとの間
に、第3の内部セルが中間消費電力の機能ブロックとし
て配置されている請求項1記載の半導体集積回路装置。
2. The semiconductor integrated circuit device according to claim 1, wherein a third internal cell is arranged as a functional block of intermediate power consumption between the first internal cell and the second internal cell.
JP3999192A 1992-02-27 1992-02-27 Semiconductor integrated circuit device Withdrawn JPH05243533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3999192A JPH05243533A (en) 1992-02-27 1992-02-27 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3999192A JPH05243533A (en) 1992-02-27 1992-02-27 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH05243533A true JPH05243533A (en) 1993-09-21

Family

ID=12568404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3999192A Withdrawn JPH05243533A (en) 1992-02-27 1992-02-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH05243533A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202924A (en) * 2005-01-19 2006-08-03 Nec Electronics Corp Semiconductor integrated circuit
KR100738776B1 (en) * 2005-03-08 2007-07-12 엡슨 이미징 디바이스 가부시키가이샤 Semiconductor circuit, drive circuit of electro-optical device, electro-optical device, and electronic apparatus
CN114388450A (en) * 2022-03-24 2022-04-22 上海燧原科技有限公司 Integrated circuit device structure and integrated chip

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006202924A (en) * 2005-01-19 2006-08-03 Nec Electronics Corp Semiconductor integrated circuit
JP4539916B2 (en) * 2005-01-19 2010-09-08 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit, semiconductor integrated circuit design method, and semiconductor integrated circuit design program
KR100738776B1 (en) * 2005-03-08 2007-07-12 엡슨 이미징 디바이스 가부시키가이샤 Semiconductor circuit, drive circuit of electro-optical device, electro-optical device, and electronic apparatus
CN114388450A (en) * 2022-03-24 2022-04-22 上海燧原科技有限公司 Integrated circuit device structure and integrated chip

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Legal Events

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A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990518