JPH0430179B2 - - Google Patents

Info

Publication number
JPH0430179B2
JPH0430179B2 JP58066204A JP6620483A JPH0430179B2 JP H0430179 B2 JPH0430179 B2 JP H0430179B2 JP 58066204 A JP58066204 A JP 58066204A JP 6620483 A JP6620483 A JP 6620483A JP H0430179 B2 JPH0430179 B2 JP H0430179B2
Authority
JP
Japan
Prior art keywords
layer
silicon substrate
silicon
substrate
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58066204A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59191350A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58066204A priority Critical patent/JPS59191350A/ja
Publication of JPS59191350A publication Critical patent/JPS59191350A/ja
Publication of JPH0430179B2 publication Critical patent/JPH0430179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP58066204A 1983-04-14 1983-04-14 半導体装置の製法 Granted JPS59191350A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58066204A JPS59191350A (ja) 1983-04-14 1983-04-14 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066204A JPS59191350A (ja) 1983-04-14 1983-04-14 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS59191350A JPS59191350A (ja) 1984-10-30
JPH0430179B2 true JPH0430179B2 (enExample) 1992-05-21

Family

ID=13309071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066204A Granted JPS59191350A (ja) 1983-04-14 1983-04-14 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS59191350A (enExample)

Also Published As

Publication number Publication date
JPS59191350A (ja) 1984-10-30

Similar Documents

Publication Publication Date Title
JP2558931B2 (ja) 半導体装置およびその製造方法
JP2682529B2 (ja) 半導体素子の素子分離絶縁膜形成方法
KR20010050077A (ko) 실리콘-게르마늄 트랜지스터 및 관련 방법
JPS63244776A (ja) 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS61145868A (ja) 半導体装置の製造方法
JPH0794503A (ja) シリコン基板の酸化方法
JP3628362B2 (ja) 半導体装置の隔離構造の製造方法
JPH0291973A (ja) 半導体装置の製造方法
JP3061025B2 (ja) 半導体装置の製造方法
JPH0430179B2 (enExample)
JPH01295438A (ja) 半導体装置の製造方法
JP2707901B2 (ja) 半導体装置の製造方法
KR100312656B1 (ko) 비씨-에스오아이 소자의 제조방법
JPH097967A (ja) 半導体装置の製造方法
JPH0590254A (ja) 半導体装置の製造方法
KR960006434B1 (ko) 트렌치 아이솔레이션 방법
JPH11354650A (ja) 半導体装置およびその製造方法
JP3446378B2 (ja) 絶縁ゲート型電界効果トランジスタの製造方法
JP2926817B2 (ja) 半導体装置の製造方法
JPH0628281B2 (ja) 半導体装置の製造方法
JP2720592B2 (ja) 半導体装置の製造方法
JP2722829B2 (ja) 半導体装置の製造方法
JPS62248236A (ja) 半導体装置の製造方法
JPS60127741A (ja) 半導体装置の製法
JPH036844A (ja) 半導体収積回路の製造方法