JPH04299851A - 半導体装置用リードフレーム - Google Patents

半導体装置用リードフレーム

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Publication number
JPH04299851A
JPH04299851A JP3064249A JP6424991A JPH04299851A JP H04299851 A JPH04299851 A JP H04299851A JP 3064249 A JP3064249 A JP 3064249A JP 6424991 A JP6424991 A JP 6424991A JP H04299851 A JPH04299851 A JP H04299851A
Authority
JP
Japan
Prior art keywords
lead
tip
lead frame
semiconductor device
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3064249A
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English (en)
Other versions
JP2936769B2 (ja
Inventor
Toru Numata
徹 沼田
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NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3064249A priority Critical patent/JP2936769B2/ja
Priority to US07/859,655 priority patent/US5406119A/en
Publication of JPH04299851A publication Critical patent/JPH04299851A/ja
Application granted granted Critical
Publication of JP2936769B2 publication Critical patent/JP2936769B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3421—Leaded components
    • H05K3/3426—Leaded components characterised by the leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10689—Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/1075—Shape details
    • H05K2201/1084—Notched leads
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体装置の製造に用
いる材料となる半導体装置用リードフレームに関する。
【０００２】
【従来の技術】従来、この種のリードフレームは、図３
（ａ），（ｂ）に示す様に、拡散工程を経て回路が製作
されたウェハーを分割してできたペレット（素子：図示
せず）を搭載するアイランド５と、このアイランド５を
囲む様配置されたインナーリード３と、封止樹脂を止め
るタイバー２と、アウターリード１とから構成される。 このインナーリード３はアウターリード１によって他の
素子等と電気的信号をやりとりするため、アルミニウム
や金で構成される直径３０μｍ程度のワイヤーにてペレ
ットと接続可能なペレット近傍２〜３ｍｍ程度の位置ま
で先端が来る。
【０００３】この半導体装置に樹脂封止を行なう際、タ
イバー２は圧力が加わった樹脂がアウターリードの外側
へ漏れない様せき止める。
【０００４】これらアイランド５，インナーリード３，
タイバー２，アウターリード１の一群を３〜８ケ横に並
べ一連のリードフレームを形成し、これらは枠４で連結
される。
【０００５】尚、従来のリードフレームは、４２合金や
銅の厚み０．１５〜０．２ｍｍ程度の平坦な板をエッチ
ング又はプレスにより、所望のパターンに抜いて形成さ
れるので、アウターリード１は、図３（ｂ）の様に平坦
なものとなっている。
【０００６】
【発明が解決しようとする課題】この従来のリードフレ
ームでは、樹脂封止後タイバー２を切断し、半田等のメ
ッキをアウターリード１に付着させ、このアウターリー
ド１をリード成形時に所望の形状が得られる展開寸法に
て切断し、その後リード成形を行なっている。そのため
リード成形されたリードの先端には、半田等のメッキが
付着しておらず実装する際半田付性が劣るという問題点
があった。
【０００７】本発明の目的は、このような問題を解決し
、リード先端部の半田付性を良好にした半導体装置用リ
ードフレームを提供することにある。
【０００８】
【課題を解決するための手段】本発明の半導体装置用リ
ードフレームの構成は、リード成形時にアウターリード
の先端となる部分に段差部または凹部を設け、そのリー
ド先端となる切断面にメッキが付着されるようにしたこ
とを特徴とする。
【０００９】
【実施例】図１は本発明の第一の実施例のリードフレー
ムの断面図である。このリードフレームは、予め計算で
求めたリード成形時所望の寸法が得られるリード展開長
からアウターリード１のリードの先端となる部分で、そ
の外側のアウターリード１が持上がる様コイニング等で
変形させて段差部１１を設けている。この時、リードフ
レームの厚さは０．１５から０．２ｍｍ程度であり、リ
ード先端の段差を厚みの２／３程度に形成している。ま
たリードの幅は０．４ｍｍ程度であるが、年々半導体素
子の多ピン化が進み細くなっていく傾向にある。
【００１０】この状態でアウターリード１にメッキを付
着させると、リード先端となる部分にもメッキが付着す
る。従って、図の一点鎖線の部分でアウターリード１を
切断し、メッキの付着した断面側をリード裏面としてリ
ード成形すると、その半導体素子を実装する際、プリン
ト基板等のパッドに接する面側のリード先端断面のリー
ド厚の２／３程度にはメッキが付着しており、良好な半
田付性が得られる。
【００１１】図２は本発明の第２の実施例のリードフレ
ームの断面図である。第一の実施例と同様に、予め計算
で求めたリード成形時所望の寸法が得られるリード展開
長からアウターリード１のリード先端となる部分でその
外側へ１ｍｍ程度の長さだけエッチングやコイニングに
より凹部１２を設けている。この凹部１２の深さは、リ
ードフレーム厚の２／３程度とする。
【００１２】本実施例の場合、アウターリード１には段
差が生じないため、従来のリードフレームと同様の扱い
ができ、半導体装置を製造する設備も従来のものがその
まま使用できる。
【００１３】
【発明の効果】以上説明した様に本発明は、リード成形
時リード先端の断面となる部分に予めリードフレーム裏
面側からリードフレームの厚み２／３程度断面を設け、
その断面にも半田等のメッキを付着させることにより、
リード成形後の実装の際に半田付性が向上するという効
果を有する。
【図面の簡単な説明】
【図１】本発明の第１の実施例のリードフレームの断面
図、
【図２】本発明の第２の実施例のリードフレームの断面
図、
【図３】（ａ），（ｂ）は従来のリードフレームの一例
の平面図およびその断面図。
【符号の説明】
１　　　　アウターリード ２　　　　タイバー ３　　　　インナーリード ４　　　　枠 ５　　　　アイランド １１　　　　段差部 １２　　　　凹部

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】　　リード成形時にアウターリードの先端
    となる部分に段差部または凹部を設け、そのリード先端
    となる切断面にメッキが付着されるようにしたことを特
    徴とする半導体装置用リードフレーム。
JP3064249A 1991-03-28 1991-03-28 半導体装置用リードフレーム Expired - Fee Related JP2936769B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3064249A JP2936769B2 (ja) 1991-03-28 1991-03-28 半導体装置用リードフレーム
US07/859,655 US5406119A (en) 1991-03-28 1992-03-30 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3064249A JP2936769B2 (ja) 1991-03-28 1991-03-28 半導体装置用リードフレーム

Publications (2)

Publication Number Publication Date
JPH04299851A true JPH04299851A (ja) 1992-10-23
JP2936769B2 JP2936769B2 (ja) 1999-08-23

Family

ID=13252698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3064249A Expired - Fee Related JP2936769B2 (ja) 1991-03-28 1991-03-28 半導体装置用リードフレーム

Country Status (2)

Country Link
US (1) US5406119A (ja)
JP (1) JP2936769B2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3130784B2 (ja) * 1995-12-28 2001-01-31 アルプス電気株式会社 電子部品の端子構造
US6853558B1 (en) * 2000-10-06 2005-02-08 Artesyn Technologies, Inc. Surface mount power supply device and associated method
MY136216A (en) * 2004-02-13 2008-08-29 Semiconductor Components Ind Method of forming a leadframe for a semiconductor package
TWI250592B (en) * 2004-11-16 2006-03-01 Siliconware Precision Industries Co Ltd Multi-chip semiconductor package and fabrication method thereof
US20080006937A1 (en) * 2006-06-23 2008-01-10 Texas Instruments Incorporated Solderability Improvement Method for Leaded Semiconductor Package
US8638535B2 (en) * 2011-01-10 2014-01-28 Hamilton Sundstrand Corporation Vertical mount transient voltage suppressor array
CN107919339B (zh) * 2016-10-11 2022-08-09 恩智浦美国有限公司 具有高密度引线阵列的半导体装置及引线框架
CN109841590A (zh) 2017-11-28 2019-06-04 恩智浦美国有限公司 用于具有j引线和鸥翼引线的集成电路装置的引线框
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