JPH0429974B2 - - Google Patents
Info
- Publication number
- JPH0429974B2 JPH0429974B2 JP58047454A JP4745483A JPH0429974B2 JP H0429974 B2 JPH0429974 B2 JP H0429974B2 JP 58047454 A JP58047454 A JP 58047454A JP 4745483 A JP4745483 A JP 4745483A JP H0429974 B2 JPH0429974 B2 JP H0429974B2
- Authority
- JP
- Japan
- Prior art keywords
- reference electrode
- ion
- main surface
- ion sensor
- isfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 description 38
- 239000012535 impurity Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910021607 Silver chloride Inorganic materials 0.000 description 4
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58047454A JPS59171852A (ja) | 1983-03-22 | 1983-03-22 | 半導体イオンセンサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58047454A JPS59171852A (ja) | 1983-03-22 | 1983-03-22 | 半導体イオンセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59171852A JPS59171852A (ja) | 1984-09-28 |
JPH0429974B2 true JPH0429974B2 (no) | 1992-05-20 |
Family
ID=12775592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58047454A Granted JPS59171852A (ja) | 1983-03-22 | 1983-03-22 | 半導体イオンセンサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59171852A (no) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS636350U (no) * | 1986-06-25 | 1988-01-16 | ||
US6134461A (en) * | 1998-03-04 | 2000-10-17 | E. Heller & Company | Electrochemical analyte |
US20240085366A1 (en) * | 2019-10-10 | 2024-03-14 | National University Corporation Kagawa University | Vascular sap measurement sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56153247A (en) * | 1980-04-28 | 1981-11-27 | Kuraray Co Ltd | Measuring circuit for ion sensor |
JPS57191540A (en) * | 1981-05-21 | 1982-11-25 | Nec Corp | Semiconductor field effect type ion sensor |
JPH0241581U (no) * | 1988-09-13 | 1990-03-22 |
-
1983
- 1983-03-22 JP JP58047454A patent/JPS59171852A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56153247A (en) * | 1980-04-28 | 1981-11-27 | Kuraray Co Ltd | Measuring circuit for ion sensor |
JPS57191540A (en) * | 1981-05-21 | 1982-11-25 | Nec Corp | Semiconductor field effect type ion sensor |
JPH0241581U (no) * | 1988-09-13 | 1990-03-22 |
Also Published As
Publication number | Publication date |
---|---|
JPS59171852A (ja) | 1984-09-28 |
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