JPH0429559Y2 - - Google Patents

Info

Publication number
JPH0429559Y2
JPH0429559Y2 JP1990038469U JP3846990U JPH0429559Y2 JP H0429559 Y2 JPH0429559 Y2 JP H0429559Y2 JP 1990038469 U JP1990038469 U JP 1990038469U JP 3846990 U JP3846990 U JP 3846990U JP H0429559 Y2 JPH0429559 Y2 JP H0429559Y2
Authority
JP
Japan
Prior art keywords
substrate
chamber
gas
deposition
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1990038469U
Other languages
English (en)
Japanese (ja)
Other versions
JPH02127028U (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPH02127028U publication Critical patent/JPH02127028U/ja
Application granted granted Critical
Publication of JPH0429559Y2 publication Critical patent/JPH0429559Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • F26B21/40—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path
    • F27B9/26—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path on or in trucks, sleds, or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microbiology (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
JP1990038469U 1981-03-16 1990-04-10 Expired JPH0429559Y2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/244,389 US4389970A (en) 1981-03-16 1981-03-16 Apparatus for regulating substrate temperature in a continuous plasma deposition process

Publications (2)

Publication Number Publication Date
JPH02127028U JPH02127028U (enExample) 1990-10-19
JPH0429559Y2 true JPH0429559Y2 (enExample) 1992-07-17

Family

ID=22922535

Family Applications (3)

Application Number Title Priority Date Filing Date
JP57040662A Pending JPS57162422A (en) 1981-03-16 1982-03-15 Substrate temperature adjusting device
JP1990038469U Expired JPH0429559Y2 (enExample) 1981-03-16 1990-04-10
JP1991070147U Expired - Lifetime JPH0639447Y2 (ja) 1981-03-16 1991-08-07 半導体デバイス製造用の半導体層蒸着装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP57040662A Pending JPS57162422A (en) 1981-03-16 1982-03-15 Substrate temperature adjusting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1991070147U Expired - Lifetime JPH0639447Y2 (ja) 1981-03-16 1991-08-07 半導体デバイス製造用の半導体層蒸着装置

Country Status (4)

Country Link
US (1) US4389970A (enExample)
EP (1) EP0060627B1 (enExample)
JP (3) JPS57162422A (enExample)
DE (1) DE3266738D1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396640A (en) * 1981-12-22 1983-08-02 Chevron Research Company Apparatus and method for substrate temperature control
JPS6011150B2 (ja) 1982-01-06 1985-03-23 株式会社山東鉄工所 布帛の低温プラズマ連続処理装置
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
US4470369A (en) * 1982-07-12 1984-09-11 Energy Conversion Devices, Inc. Apparatus for uniformly heating a substrate
US4440107A (en) * 1982-07-12 1984-04-03 Energy Conversion Devices, Inc. Magnetic apparatus for reducing substrate warpage
JPS59166238A (ja) * 1983-03-10 1984-09-19 Toshiba Corp 薄膜形成装置
JPS60116778A (ja) * 1983-11-23 1985-06-24 ジエミニ　リサーチ，インコーポレイテツド 化学蒸着方法及び装置
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US4773355A (en) * 1985-06-10 1988-09-27 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition
US4699080A (en) * 1986-05-15 1987-10-13 Dynapert-Htc Corporation Temperature sensors for vapor processing systems
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US5070625A (en) * 1988-04-25 1991-12-10 Urquhart Gordon T Oven for the curing and cooling of painted objects and method
GB2227754A (en) * 1988-10-14 1990-08-08 Pilkington Plc Gas flow restrictor for glass coating apparatus
FR2653866A1 (fr) * 1989-10-31 1991-05-03 France Rayonnement Procede pour la gestion des conditions de fonctionnement d'un secheur ultra-violet.
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3354747B2 (ja) * 1995-05-22 2002-12-09 株式会社フジクラ Ｃｖｄ反応装置および酸化物超電導導体の製造方法
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
JP2000064047A (ja) 1998-06-26 2000-02-29 James A Mclaughlin ダイヤモンド様炭素（ｄｌｃ）又は他の真空蒸着被膜を基体に被覆する装置及び方法
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6200650B1 (en) 1999-05-26 2001-03-13 Ppg Industries Ohio, Inc. Processes for drying and curing primer coating compositions
US6863935B2 (en) 1999-05-26 2005-03-08 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with multi-component composite coating compositions
US6221441B1 (en) 1999-05-26 2001-04-24 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with liquid basecoat and powder topcoat
US6596347B2 (en) 1999-05-26 2003-07-22 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with a first powder coating and a second powder coating
US7011869B2 (en) * 1999-05-26 2006-03-14 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with multi-component composite coating compositions
US6291027B1 (en) 1999-05-26 2001-09-18 Ppg Industries Ohio, Inc. Processes for drying and curing primer coating compositions
US6231932B1 (en) 1999-05-26 2001-05-15 Ppg Industries Ohio, Inc. Processes for drying topcoats and multicomponent composite coatings on metal and polymeric substrates
US7234862B2 (en) * 2000-10-13 2007-06-26 Tokyo Electron Limited Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US8124170B1 (en) 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
CA2652369A1 (en) * 2006-05-26 2007-12-06 Urban C. Hirschey Carton assembly having a waterproof lining
US20100139557A1 (en) * 2006-10-13 2010-06-10 Solopower, Inc. Reactor to form solar cell absorbers in roll-to-roll fashion
TW200831751A (en) * 2007-01-19 2008-08-01 Xxentria Technology Materials Co Ltd Method for manufacturing architecture board having protection layer
ES2336870B1 (es) * 2007-08-20 2011-02-18 Novogenio, S.L. Sistema y procedimiento para el recubrimiento en vacio y en continuo de un material en forma de banda.
GB2462846B (en) * 2008-08-22 2013-03-13 Tisics Ltd Coated filaments and their manufacture
US9589817B2 (en) 2011-04-15 2017-03-07 Illinois Tool Works Inc. Dryer
KR102184276B1 (ko) * 2012-10-09 2020-12-01 유로플라즈마 엔브이 표면 코팅을 제공하기 위한 장치 및 방법
US20160172220A1 (en) * 2014-12-10 2016-06-16 National Chung Shan Institute Of Science And Technology Selenization process apparatus for glass substrate
DE102017108290B4 (de) * 2016-04-25 2021-05-06 Toyota Jidosha Kabushiki Kaisha Plasmavorrichtung
US11251019B2 (en) 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
JP6662840B2 (ja) * 2017-12-11 2020-03-11 株式会社アルバック 蒸着装置
JP7233639B2 (ja) * 2019-04-19 2023-03-07 日新電機株式会社 シリコン膜の成膜方法
WO2022040075A1 (en) 2020-08-21 2022-02-24 Applied Materials, Inc. Processing system for processing a flexible substrate and method of measuring at least one of a property of a flexible substrate and a property of one or more coatings on the flexible substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2673080A (en) * 1950-05-03 1954-03-23 Surface Combustion Corp Strip heating
US2785082A (en) * 1954-03-22 1957-03-12 Nat Res Corp Coating process
DE1072052B (de) * 1954-10-01 1959-12-24 Standard Elektrik Lorenz Aktiengesellschaft, Stutfcgart-Zuffenhausen Verfahren zur Herstellung von elektrisch leitenden und durchsichtigen Schichten auf Glaskörpern
DE1160815B (de) * 1959-07-21 1964-01-09 Hoesch Ag Verfahren zur Herstellung von Profilen aus kaltgewalzten oder vergueteten Stahl- undNichteisenmetallbaendern
FR1353767A (fr) * 1962-03-21 1964-02-28 Philips Nv Procédé d'application de couches par vaporisation
US3240915A (en) * 1962-09-19 1966-03-15 Fostoria Corp Infra-red heater
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient
JPS5745714B2 (enExample) * 1972-09-12 1982-09-29
DE2316086A1 (de) * 1973-03-30 1974-10-17 Vianova Kunstharz Ag Anordnung zum haerten von ueberzuegen und anstrichstoffen mittels von irasern emittierter infrarot-strahlung
DE2343499C3 (de) * 1973-08-29 1980-07-10 Schladitz-Whiskers Ag, Zug (Schweiz) Verfahren und Vorrichtung zum Metallisieren von bewegtem flächigem Gut
US4158717A (en) * 1977-02-14 1979-06-19 Varian Associates, Inc. Silicon nitride film and method of deposition
JPS53105366A (en) * 1977-02-25 1978-09-13 Hitachi Ltd Manufacture for semiconductor element substrate
US4224355A (en) * 1978-03-15 1980-09-23 Photon Power, Inc. Method for quality film formation
US4229236A (en) * 1979-07-24 1980-10-21 Samuel Strapping Systems Limited Process and apparatus for heat treating steel using infrared radiation

Also Published As

Publication number Publication date
JPH0613131U (ja) 1994-02-18
EP0060627A3 (en) 1983-05-25
DE3266738D1 (en) 1985-11-14
JPH0639447Y2 (ja) 1994-10-12
EP0060627B1 (en) 1985-10-09
EP0060627A2 (en) 1982-09-22
US4389970A (en) 1983-06-28
JPH02127028U (enExample) 1990-10-19
JPS57162422A (en) 1982-10-06

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