DE3266738D1 - Apparatus for regulating substrate temperature in a continuous plasma deposition process - Google Patents

Apparatus for regulating substrate temperature in a continuous plasma deposition process

Info

Publication number
DE3266738D1
DE3266738D1 DE8282300919T DE3266738T DE3266738D1 DE 3266738 D1 DE3266738 D1 DE 3266738D1 DE 8282300919 T DE8282300919 T DE 8282300919T DE 3266738 T DE3266738 T DE 3266738T DE 3266738 D1 DE3266738 D1 DE 3266738D1
Authority
DE
Germany
Prior art keywords
deposition process
substrate temperature
plasma deposition
continuous plasma
regulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282300919T
Other languages
German (de)
English (en)
Inventor
Robert F Edgerton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3266738D1 publication Critical patent/DE3266738D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • F26B21/40—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
    • F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path
    • F27B9/26—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path on or in trucks, sleds, or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microbiology (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
DE8282300919T 1981-03-16 1982-02-23 Apparatus for regulating substrate temperature in a continuous plasma deposition process Expired DE3266738D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/244,389 US4389970A (en) 1981-03-16 1981-03-16 Apparatus for regulating substrate temperature in a continuous plasma deposition process

Publications (1)

Publication Number Publication Date
DE3266738D1 true DE3266738D1 (en) 1985-11-14

Family

ID=22922535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282300919T Expired DE3266738D1 (en) 1981-03-16 1982-02-23 Apparatus for regulating substrate temperature in a continuous plasma deposition process

Country Status (4)

Country Link
US (1) US4389970A (enExample)
EP (1) EP0060627B1 (enExample)
JP (3) JPS57162422A (enExample)
DE (1) DE3266738D1 (enExample)

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US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
US4470369A (en) * 1982-07-12 1984-09-11 Energy Conversion Devices, Inc. Apparatus for uniformly heating a substrate
US4440107A (en) * 1982-07-12 1984-04-03 Energy Conversion Devices, Inc. Magnetic apparatus for reducing substrate warpage
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JPS60116778A (ja) * 1983-11-23 1985-06-24 ジエミニ　リサーチ，インコーポレイテツド 化学蒸着方法及び装置
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US4773355A (en) * 1985-06-10 1988-09-27 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition
US4699080A (en) * 1986-05-15 1987-10-13 Dynapert-Htc Corporation Temperature sensors for vapor processing systems
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US5070625A (en) * 1988-04-25 1991-12-10 Urquhart Gordon T Oven for the curing and cooling of painted objects and method
GB2227754A (en) * 1988-10-14 1990-08-08 Pilkington Plc Gas flow restrictor for glass coating apparatus
FR2653866A1 (fr) * 1989-10-31 1991-05-03 France Rayonnement Procede pour la gestion des conditions de fonctionnement d'un secheur ultra-violet.
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US6016383A (en) * 1990-01-19 2000-01-18 Applied Materials, Inc. Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3354747B2 (ja) * 1995-05-22 2002-12-09 株式会社フジクラ Ｃｖｄ反応装置および酸化物超電導導体の製造方法
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
JP2000064047A (ja) 1998-06-26 2000-02-29 James A Mclaughlin ダイヤモンド様炭素（ｄｌｃ）又は他の真空蒸着被膜を基体に被覆する装置及び方法
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6200650B1 (en) 1999-05-26 2001-03-13 Ppg Industries Ohio, Inc. Processes for drying and curing primer coating compositions
US6863935B2 (en) 1999-05-26 2005-03-08 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with multi-component composite coating compositions
US6221441B1 (en) 1999-05-26 2001-04-24 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with liquid basecoat and powder topcoat
US6596347B2 (en) 1999-05-26 2003-07-22 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with a first powder coating and a second powder coating
US7011869B2 (en) * 1999-05-26 2006-03-14 Ppg Industries Ohio, Inc. Multi-stage processes for coating substrates with multi-component composite coating compositions
US6291027B1 (en) 1999-05-26 2001-09-18 Ppg Industries Ohio, Inc. Processes for drying and curing primer coating compositions
US6231932B1 (en) 1999-05-26 2001-05-15 Ppg Industries Ohio, Inc. Processes for drying topcoats and multicomponent composite coatings on metal and polymeric substrates
US7234862B2 (en) * 2000-10-13 2007-06-26 Tokyo Electron Limited Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US8124170B1 (en) 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
CA2652369A1 (en) * 2006-05-26 2007-12-06 Urban C. Hirschey Carton assembly having a waterproof lining
US20100139557A1 (en) * 2006-10-13 2010-06-10 Solopower, Inc. Reactor to form solar cell absorbers in roll-to-roll fashion
TW200831751A (en) * 2007-01-19 2008-08-01 Xxentria Technology Materials Co Ltd Method for manufacturing architecture board having protection layer
ES2336870B1 (es) * 2007-08-20 2011-02-18 Novogenio, S.L. Sistema y procedimiento para el recubrimiento en vacio y en continuo de un material en forma de banda.
GB2462846B (en) * 2008-08-22 2013-03-13 Tisics Ltd Coated filaments and their manufacture
US9589817B2 (en) 2011-04-15 2017-03-07 Illinois Tool Works Inc. Dryer
KR102184276B1 (ko) * 2012-10-09 2020-12-01 유로플라즈마 엔브이 표면 코팅을 제공하기 위한 장치 및 방법
US20160172220A1 (en) * 2014-12-10 2016-06-16 National Chung Shan Institute Of Science And Technology Selenization process apparatus for glass substrate
DE102017108290B4 (de) * 2016-04-25 2021-05-06 Toyota Jidosha Kabushiki Kaisha Plasmavorrichtung
US11251019B2 (en) 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
JP6662840B2 (ja) * 2017-12-11 2020-03-11 株式会社アルバック 蒸着装置
JP7233639B2 (ja) * 2019-04-19 2023-03-07 日新電機株式会社 シリコン膜の成膜方法
WO2022040075A1 (en) 2020-08-21 2022-02-24 Applied Materials, Inc. Processing system for processing a flexible substrate and method of measuring at least one of a property of a flexible substrate and a property of one or more coatings on the flexible substrate

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Also Published As

Publication number Publication date
JPH0613131U (ja) 1994-02-18
EP0060627A3 (en) 1983-05-25
JPH0639447Y2 (ja) 1994-10-12
EP0060627B1 (en) 1985-10-09
EP0060627A2 (en) 1982-09-22
US4389970A (en) 1983-06-28
JPH02127028U (enExample) 1990-10-19
JPH0429559Y2 (enExample) 1992-07-17
JPS57162422A (en) 1982-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee