JPH0426215B2 - - Google Patents

Info

Publication number
JPH0426215B2
JPH0426215B2 JP59117314A JP11731484A JPH0426215B2 JP H0426215 B2 JPH0426215 B2 JP H0426215B2 JP 59117314 A JP59117314 A JP 59117314A JP 11731484 A JP11731484 A JP 11731484A JP H0426215 B2 JPH0426215 B2 JP H0426215B2
Authority
JP
Japan
Prior art keywords
thin metal
wire
oxide film
semiconductor device
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59117314A
Other languages
English (en)
Other versions
JPS60261144A (ja
Inventor
Mitsuharu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP59117314A priority Critical patent/JPS60261144A/ja
Publication of JPS60261144A publication Critical patent/JPS60261144A/ja
Publication of JPH0426215B2 publication Critical patent/JPH0426215B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置に関し、一層詳細には、半
導体素子とリード部とを接続する金属細線間の短
絡を有効に阻止することのできる半導体装置に関
する。
（従来の技術） 半導体装置においては、パツケージ内に密封し
た半導体素子との電気的導通をとるために、パツ
ケージ内に臨んでいるリード部と半導体素子とを
金属細線によつて接続している。
（発明が解決しようとする課題） ところで近年半導体素子の集積度が高まるにつ
れ、狭い面積の半導体素子に多数の金属細線を接
続する必要が生じているが、それに伴い金属細線
間の短絡事故が多発するに及んでいる（第１図）。
この短絡事故には、半導体装置の使用時、取扱
時等の衝撃によつても発生するほか、樹脂モール
ド型半導体装置にあつては、樹脂封止時の樹脂圧
によつて金属細線が変形し短絡事故が発生すると
いう製造時における問題点も抱えている。
従来上記短絡事故を防止するため、金属細線の
表面に樹脂皮膜を形成して絶縁を図るようにした
ものが知られている。
しかし、金属細線表面に樹脂皮膜を形成するの
は厄介であり、また径が大きくなつて多ピンのリ
ードフレームに対応できなくなるなどの問題点が
ある。
（発明の目的） そこで本発明は上記問題点を解消すべくなされ
たもので、その目的とするところは、多ピン化に
対応できると共に、金属細線間の短絡事故を有効
に回避しうる半導体装置を提供するにある。
（課題を解決するための手段） 上記目的による本発明では、半導体素子とリー
ド部とを金属細線を用いて接続している半導体装
置において、前記金属細線は表面に絶縁性の酸化
皮膜が形成されたアルミニウム線からなり、半導
体素子およびリード線との接続部においてその酸
化皮膜がワイヤーボンダーによつて破壊されて接
続されていることを特徴としている。
（作用） 金属細線に表面に酸化皮膜を形成したものを用
いたからリード線間の短絡を有効に防止しうる。
また従来のように表面に樹脂皮膜を形成するも
のに比して容易に製造でき、さらに径を細く形成
できるので多ピンの半導体装置にも対応できる。
（実施例） 以下本発明の好適な実施例を添付図面に基づい
て詳細に説明する。
第２図において、１０はアルミニウム線からな
る金属細線、１２はこの金属細線１０の表面に形
成された絶縁性を有する酸化皮膜（Al2C3）であ
る。
第３図は半導体装置として、半導体素子１４と
リード部１６とを金属細線で接続した状態を示
す。
表面に酸化皮膜１２が形成された金属細線１０
は半導体素子１４およびリード部１６との接続部
の酸化皮膜１２が破壊されて接続され、電気的導
通が確保されている。
この酸化皮膜１２の破壊は、ワイヤボンデイン
グ時にワイヤボンダー（図示せず）によつて、金
属細線１０の接続と同時に効率よく行われる。
現在実用化されているワイヤボンデイングに
は、熱圧着法、超音波法がある。
上記の酸化皮膜１２は超音波ボンデイングによ
る超音波振動によつて破壊して導通を確保しう
る。したがつて超音波法によつて酸化皮膜１２を
破壊しつつワイヤボンデイングを行うことができ
る。
（発明の効果） 以上のように本発明による半導体装置によれ
ば、金属細線に表面に酸化皮膜を形成したものを
用いたからリード線間の短絡を有効に防止しう
る。
また従来のように表面に樹脂皮膜を形成するも
のに比して容易に製造でき、さらに径を細く形成
できるので多ピンの半導体装置にも対応できると
いう著効を奏する。
【図面の簡単な説明】
第１図は従来の半導体装置における金属細線の
短絡事故を示す説明図である。第２図は表面に酸
化皮膜を形成した金属細線の説明図である。第３
図はその半導体素子とリード部とに対向する接続
状態を示す説明図である。 １０……金属細線、１２……酸化皮膜、１４…
…半導体素子、１６……リード部。

Claims (1)

    【特許請求の範囲】
  1. １ 半導体素子とリード部とを金属細線を用いて
    接続している半導体装置において、前記金属細線
    は表面に絶縁性の酸化皮膜が形成されたアルミニ
    ウム線からなり、半導体素子およびリード線との
    接続部においてその酸化皮膜がワイヤーボンダー
    によつて破壊されて接続されていることを特徴と
    する半導体装置。
JP59117314A 1984-06-07 1984-06-07 半導体装置 Granted JPS60261144A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59117314A JPS60261144A (ja) 1984-06-07 1984-06-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59117314A JPS60261144A (ja) 1984-06-07 1984-06-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS60261144A JPS60261144A (ja) 1985-12-24
JPH0426215B2 true JPH0426215B2 (ja) 1992-05-06

Family

ID=14708681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59117314A Granted JPS60261144A (ja) 1984-06-07 1984-06-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS60261144A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174731A (ja) * 1985-01-30 1986-08-06 Toshiba Corp ワイヤボンデイング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549577A (en) * 1977-06-24 1979-01-24 Shinkawa Seisakusho Kk Semiconductor
JPS5691306A (en) * 1979-12-21 1981-07-24 Nippon Electric Co Bonding wire

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773934U (ja) * 1980-10-22 1982-05-07

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549577A (en) * 1977-06-24 1979-01-24 Shinkawa Seisakusho Kk Semiconductor
JPS5691306A (en) * 1979-12-21 1981-07-24 Nippon Electric Co Bonding wire

Also Published As

Publication number Publication date
JPS60261144A (ja) 1985-12-24

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