JPH0425712B2 - - Google Patents

Info

Publication number
JPH0425712B2
JPH0425712B2 JP57188720A JP18872082A JPH0425712B2 JP H0425712 B2 JPH0425712 B2 JP H0425712B2 JP 57188720 A JP57188720 A JP 57188720A JP 18872082 A JP18872082 A JP 18872082A JP H0425712 B2 JPH0425712 B2 JP H0425712B2
Authority
JP
Japan
Prior art keywords
emitter
transistor
circuit
width
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57188720A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5978559A (ja
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57188720A priority Critical patent/JPS5978559A/ja
Publication of JPS5978559A publication Critical patent/JPS5978559A/ja
Publication of JPH0425712B2 publication Critical patent/JPH0425712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
JP57188720A 1982-10-27 1982-10-27 半導体集積回路 Granted JPS5978559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57188720A JPS5978559A (ja) 1982-10-27 1982-10-27 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57188720A JPS5978559A (ja) 1982-10-27 1982-10-27 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS5978559A JPS5978559A (ja) 1984-05-07
JPH0425712B2 true JPH0425712B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=16228597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57188720A Granted JPS5978559A (ja) 1982-10-27 1982-10-27 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS5978559A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110267A (ja) * 1984-06-26 1986-01-17 Nec Corp モノリシック集積回路の製造方法
JPS6220363A (ja) * 1985-07-18 1987-01-28 Nec Corp 半導体集積回路
JPH04138720A (ja) * 1990-09-28 1992-05-13 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS5978559A (ja) 1984-05-07

Similar Documents

Publication Publication Date Title
US4631567A (en) PNPN integrated circuit protective device with integral resistor
US4890017A (en) CMOS-BiCMOS gate circuit
US4845386A (en) Bi-MOS logic circuit having a totem pole type output buffer section
JP2535082B2 (ja) 双極性相補形金属酸化物半導体出力駆動回路
JP2696991B2 (ja) ＢｉＣＭＯＳ論理回路
KR960016010B1 (ko) 지연-펄스 발생기
US4264829A (en) MOS Inverter-buffer circuit having a small input capacitance
JPH0425712B2 (enrdf_load_stackoverflow)
KR960013630B1 (ko) 집적회로에서의 접지 변동 감소 장치
US3265906A (en) Inverter circuit in which a coupling transistor functions similar to charge storage diode
US5239212A (en) Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrangement
JP2861300B2 (ja) Ｍｎｔｌ型半導体集積回路装置
US5563543A (en) Low-voltage BiCMOS digital delay chain suitable for operation over a wide power supply range
JP2666601B2 (ja) ピークホールド回路
JPH11243639A (ja) 半導体回路
KR960008139B1 (ko) 능동전류원을 사용한 이씨엘(ecl)회로
JPH0322615A (ja) Ｃｍｏｓ―ｅｃｌ変換器
JP2973593B2 (ja) ダイナミック型分周器回路
KR920004922B1 (ko) 반도체 집적회로장치
US5287021A (en) Low noise BICMOS circuit
JPH0537350A (ja) Ｅｃｌ回路
JPH0562988A (ja) 半導体出力回路
JP2806369B2 (ja) Ｅｃｌ回路
JPH0521450B2 (enrdf_load_stackoverflow)
JPH0648780B2 (ja) スイッチング回路