JPH042555B2 - - Google Patents

Info

Publication number
JPH042555B2
JPH042555B2 JP58075901A JP7590183A JPH042555B2 JP H042555 B2 JPH042555 B2 JP H042555B2 JP 58075901 A JP58075901 A JP 58075901A JP 7590183 A JP7590183 A JP 7590183A JP H042555 B2 JPH042555 B2 JP H042555B2
Authority
JP
Japan
Prior art keywords
single crystal
hydrogen chloride
gaas
hcl
group element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58075901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59203800A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7590183A priority Critical patent/JPS59203800A/ja
Publication of JPS59203800A publication Critical patent/JPS59203800A/ja
Publication of JPH042555B2 publication Critical patent/JPH042555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7590183A 1983-04-28 1983-04-28 無機化合物単結晶薄膜の気相エピタキシヤル成長方法 Granted JPS59203800A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7590183A JPS59203800A (ja) 1983-04-28 1983-04-28 無機化合物単結晶薄膜の気相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7590183A JPS59203800A (ja) 1983-04-28 1983-04-28 無機化合物単結晶薄膜の気相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS59203800A JPS59203800A (ja) 1984-11-17
JPH042555B2 true JPH042555B2 (enrdf_load_stackoverflow) 1992-01-20

Family

ID=13589697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7590183A Granted JPS59203800A (ja) 1983-04-28 1983-04-28 無機化合物単結晶薄膜の気相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS59203800A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001233698A (ja) * 2000-02-23 2001-08-28 Mitsubishi Chemicals Corp りん化ひ化ガリウム混晶エピタキシャルウエハ
JP4816079B2 (ja) * 2005-12-28 2011-11-16 三菱化学株式会社 Ｇａ含有窒化物半導体の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751127A (en) * 1980-09-12 1982-03-25 Mitsubishi Electric Corp Growth of semiconductor of compound of 3-5 group in gaseous phase

Also Published As

Publication number Publication date
JPS59203800A (ja) 1984-11-17

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