JPH0423833B2 - - Google Patents

Info

Publication number
JPH0423833B2
JPH0423833B2 JP58016738A JP1673883A JPH0423833B2 JP H0423833 B2 JPH0423833 B2 JP H0423833B2 JP 58016738 A JP58016738 A JP 58016738A JP 1673883 A JP1673883 A JP 1673883A JP H0423833 B2 JPH0423833 B2 JP H0423833B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
gas
document reading
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58016738A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59143372A (ja
Inventor
Mario Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58016738A priority Critical patent/JPS59143372A/ja
Publication of JPS59143372A publication Critical patent/JPS59143372A/ja
Publication of JPH0423833B2 publication Critical patent/JPH0423833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58016738A 1983-02-03 1983-02-03 光電変換素子およびその製造方法 Granted JPS59143372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58016738A JPS59143372A (ja) 1983-02-03 1983-02-03 光電変換素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016738A JPS59143372A (ja) 1983-02-03 1983-02-03 光電変換素子およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59143372A JPS59143372A (ja) 1984-08-16
JPH0423833B2 true JPH0423833B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=11924604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016738A Granted JPS59143372A (ja) 1983-02-03 1983-02-03 光電変換素子およびその製造方法

Country Status (1)

Country Link
JP (1) JPS59143372A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3139031B2 (ja) * 1991-02-21 2001-02-26 日本板硝子株式会社 熱線遮蔽ガラス
KR100877817B1 (ko) * 2005-11-08 2009-01-12 엘지전자 주식회사 고효율 태양전지 및 그것의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143090A (enrdf_load_stackoverflow) * 1974-10-09 1976-04-13 Sony Corp

Also Published As

Publication number Publication date
JPS59143372A (ja) 1984-08-16

Similar Documents

Publication Publication Date Title
EP0117980B1 (en) Process for forming passivation film on photoelectric conversion device and the device produced thereby
EP1320134B1 (en) Photovoltaic device and manufacturing method thereof
US4196438A (en) Article and device having an amorphous silicon containing a halogen and method of fabrication
EP0475666B1 (en) Method of Manufacturing an Amorphous Silicon Solar Cell
KR100336252B1 (ko) 미정질반도체막제조방법
US4587171A (en) Process for forming passivation film on photoelectric conversion device and the device produced thereby
KR100659044B1 (ko) 산화아연 박막을 가지는 태양전지 및 그 제조 방법
US4781765A (en) Photovoltaic device
US4358782A (en) Semiconductor device
JPH0423833B2 (enrdf_load_stackoverflow)
JPS61159771A (ja) 光起電力装置
JPH01201968A (ja) 光電変換装置
JPS6245079A (ja) 太陽電池用基板およびその製法
JPS60210825A (ja) 太陽電池
US20210005774A1 (en) Passivation process
JPH0312973A (ja) 非晶質薄膜太陽電池
JPH10200143A (ja) アモルファスシリコン太陽電池
JP3649948B2 (ja) 光起電力装置及びその製造方法
GB2067834A (en) Semiconductor Device
JPS6258675B2 (enrdf_load_stackoverflow)
JPH06181330A (ja) 非晶質半導体太陽電池とその製造方法
EP0465026B1 (en) Method of manufactoring a photoelectric device made of hydrogenated amorphous silicon
CN119133315A (zh) Tco薄膜的制作方法和异质结电池的制作方法
JPH04369870A (ja) 光起電力装置の製造方法
JP2014007302A (ja) 界面パッシベーション構造の製造方法および太陽電池