JPH0422342B2 - - Google Patents
Info
- Publication number
- JPH0422342B2 JPH0422342B2 JP60109365A JP10936585A JPH0422342B2 JP H0422342 B2 JPH0422342 B2 JP H0422342B2 JP 60109365 A JP60109365 A JP 60109365A JP 10936585 A JP10936585 A JP 10936585A JP H0422342 B2 JPH0422342 B2 JP H0422342B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- type gaas
- emitter
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 239000002784 hot electron Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 22
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60109365A JPS61268062A (ja) | 1985-05-23 | 1985-05-23 | ホットエレクトロン・トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60109365A JPS61268062A (ja) | 1985-05-23 | 1985-05-23 | ホットエレクトロン・トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61268062A JPS61268062A (ja) | 1986-11-27 |
| JPH0422342B2 true JPH0422342B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-04-16 |
Family
ID=14508382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60109365A Granted JPS61268062A (ja) | 1985-05-23 | 1985-05-23 | ホットエレクトロン・トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61268062A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1985
- 1985-05-23 JP JP60109365A patent/JPS61268062A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61268062A (ja) | 1986-11-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |