JPH0420266B2 - - Google Patents

Info

Publication number
JPH0420266B2
JPH0420266B2 JP56129521A JP12952181A JPH0420266B2 JP H0420266 B2 JPH0420266 B2 JP H0420266B2 JP 56129521 A JP56129521 A JP 56129521A JP 12952181 A JP12952181 A JP 12952181A JP H0420266 B2 JPH0420266 B2 JP H0420266B2
Authority
JP
Japan
Prior art keywords
film
sio
substrate
window
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56129521A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5831552A (ja
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP12952181A priority Critical patent/JPS5831552A/ja
Publication of JPS5831552A publication Critical patent/JPS5831552A/ja
Publication of JPH0420266B2 publication Critical patent/JPH0420266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP12952181A 1981-08-18 1981-08-18 半導体装置の製造方法 Granted JPS5831552A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12952181A JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12952181A JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5831552A JPS5831552A (ja) 1983-02-24
JPH0420266B2 true JPH0420266B2 (de) 1992-04-02

Family

ID=15011552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12952181A Granted JPS5831552A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5831552A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547954B1 (fr) * 1983-06-21 1985-10-25 Efcis Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice
JPS6038830A (ja) * 1983-08-12 1985-02-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
DE69209678T2 (de) * 1991-02-01 1996-10-10 Philips Electronics Nv Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019439A (de) * 1973-04-09 1975-02-28
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019439A (de) * 1973-04-09 1975-02-28
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film

Also Published As

Publication number Publication date
JPS5831552A (ja) 1983-02-24

Similar Documents

Publication Publication Date Title
JP3033412B2 (ja) 半導体装置の製造方法
US6268268B1 (en) Method of manufacturing semiconductor device
US4722912A (en) Method of forming a semiconductor structure
JPH0420266B2 (de)
EP0140749B1 (de) Verfahren zum Herstellen einer komplementären Halbleitervorrichtung mit dielektrischer Isolation
JPH0415619B2 (de)
JPS6359538B2 (de)
JPH0368170A (ja) 薄膜半導体素子の製造方法
JPH06163528A (ja) 半導体装置の製造方法
JPS62214638A (ja) 半導体装置の製造方法
JPH07122518A (ja) コンタクト電極の形成方法
JPH0685051A (ja) 半導体装置の製造方法
JP2950620B2 (ja) 半導体装置
JPS6010748A (ja) 半導体装置の製造方法
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
JPH05129427A (ja) 半導体装置
JPS6293954A (ja) 誘電体分離基板の製造方法
JP2664458B2 (ja) 素子分離方法
JPH0216019B2 (de)
JPH08236475A (ja) コンタクト窓の形成方法
JPS5943832B2 (ja) 半導体装置の製造方法
JPH05109881A (ja) 半導体装置の製造方法
JPS58130555A (ja) 半導体装置
JPS60242636A (ja) 半導体装置
JPS6244411B2 (de)