JPH0419713B2 - - Google Patents
Info
- Publication number
- JPH0419713B2 JPH0419713B2 JP57206808A JP20680882A JPH0419713B2 JP H0419713 B2 JPH0419713 B2 JP H0419713B2 JP 57206808 A JP57206808 A JP 57206808A JP 20680882 A JP20680882 A JP 20680882A JP H0419713 B2 JPH0419713 B2 JP H0419713B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photoelectric conversion
- conductive film
- open groove
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101710205482 Nuclear factor 1 A-type Proteins 0.000 description 1
- 101710170464 Nuclear factor 1 B-type Proteins 0.000 description 1
- 102100022162 Nuclear factor 1 C-type Human genes 0.000 description 1
- 101710113455 Nuclear factor 1 C-type Proteins 0.000 description 1
- 101710140810 Nuclear factor 1 X-type Proteins 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013311 covalent triazine framework Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000000720 eyelash Anatomy 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57206808A JPS5996779A (ja) | 1982-11-24 | 1982-11-24 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57206808A JPS5996779A (ja) | 1982-11-24 | 1982-11-24 | 光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5996779A JPS5996779A (ja) | 1984-06-04 |
| JPH0419713B2 true JPH0419713B2 (US20080094685A1-20080424-C00004.png) | 1992-03-31 |
Family
ID=16529426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57206808A Granted JPS5996779A (ja) | 1982-11-24 | 1982-11-24 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5996779A (US20080094685A1-20080424-C00004.png) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603164A (ja) * | 1983-06-21 | 1985-01-09 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| JPS6059785A (ja) * | 1983-09-12 | 1985-04-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置およびその作製方法 |
| JPS60100479A (ja) * | 1983-11-04 | 1985-06-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPS60100480A (ja) * | 1983-11-04 | 1985-06-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
| JPS60100481A (ja) * | 1983-11-05 | 1985-06-04 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
| JPS6116579A (ja) * | 1984-07-03 | 1986-01-24 | Sanyo Electric Co Ltd | 集積型太陽電池 |
| JPS63179581A (ja) * | 1987-01-20 | 1988-07-23 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| CN102576764A (zh) | 2009-10-15 | 2012-07-11 | Lg伊诺特有限公司 | 太阳能电池设备及其制造方法 |
| JP2014093376A (ja) * | 2012-11-01 | 2014-05-19 | Kaneka Corp | 薄膜光電変換装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651880A (en) * | 1979-10-04 | 1981-05-09 | Fuji Electric Co Ltd | Amorphous semiconductor photocell |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
-
1982
- 1982-11-24 JP JP57206808A patent/JPS5996779A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651880A (en) * | 1979-10-04 | 1981-05-09 | Fuji Electric Co Ltd | Amorphous semiconductor photocell |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5996779A (ja) | 1984-06-04 |
