JPH0419712B2 - - Google Patents
Info
- Publication number
- JPH0419712B2 JPH0419712B2 JP13411881A JP13411881A JPH0419712B2 JP H0419712 B2 JPH0419712 B2 JP H0419712B2 JP 13411881 A JP13411881 A JP 13411881A JP 13411881 A JP13411881 A JP 13411881A JP H0419712 B2 JPH0419712 B2 JP H0419712B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- forming
- diaphragm
- silicon wafer
- tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 58
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000011109 contamination Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134118A JPS5835982A (ja) | 1981-08-28 | 1981-08-28 | 半導体圧力センサの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134118A JPS5835982A (ja) | 1981-08-28 | 1981-08-28 | 半導体圧力センサの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5835982A JPS5835982A (ja) | 1983-03-02 |
| JPH0419712B2 true JPH0419712B2 (fr) | 1992-03-31 |
Family
ID=15120876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56134118A Granted JPS5835982A (ja) | 1981-08-28 | 1981-08-28 | 半導体圧力センサの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5835982A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697698B2 (ja) * | 1985-09-25 | 1994-11-30 | 日本電気株式会社 | 圧力センサの製造方法 |
| JPH0233948A (ja) * | 1988-07-22 | 1990-02-05 | Matsushita Electric Ind Co Ltd | 光半導体装置の製造方法 |
| KR20040011244A (ko) * | 2002-07-30 | 2004-02-05 | 주식회사 비에스이 | 다이어프램이 형성된 반도체소자의 커팅방법 |
| JP4905696B2 (ja) * | 2007-04-09 | 2012-03-28 | 三菱電機株式会社 | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503620A (fr) * | 1973-05-12 | 1975-01-16 | ||
| JPS5434752A (en) * | 1977-08-24 | 1979-03-14 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS562671A (en) * | 1979-06-22 | 1981-01-12 | Nissan Motor Co Ltd | Manufacture of semiconductor diaphragm |
-
1981
- 1981-08-28 JP JP56134118A patent/JPS5835982A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS503620A (fr) * | 1973-05-12 | 1975-01-16 | ||
| JPS5434752A (en) * | 1977-08-24 | 1979-03-14 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS562671A (en) * | 1979-06-22 | 1981-01-12 | Nissan Motor Co Ltd | Manufacture of semiconductor diaphragm |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5835982A (ja) | 1983-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6893574B2 (en) | MEMS capping method and apparatus | |
| TW559876B (en) | Method and apparatus for dicing a semiconductor wafer | |
| US8343369B2 (en) | Method of producing a MEMS device | |
| KR20070110831A (ko) | 중첩 엘리먼트 마이크로 구조물을 집단 생성하는 방법 | |
| US7598125B2 (en) | Method for wafer level packaging and fabricating cap structures | |
| CN101009230A (zh) | 晶片级封装和切割的方法 | |
| US20080227234A1 (en) | Method of manufacturing a semiconductor device | |
| US7510947B2 (en) | Method for wafer level packaging and fabricating cap structures | |
| JP2001523046A (ja) | 回路を備える半導体ウェハをシンニングするための方法および同方法によって作られるウェハ | |
| JPH0419712B2 (fr) | ||
| US7361284B2 (en) | Method for wafer-level package | |
| US20070166958A1 (en) | Method of wafer level packaging and cutting | |
| US7470565B2 (en) | Method of wafer level packaging and cutting | |
| JPS5898983A (ja) | 半導体圧力変換器の製造方法 | |
| JP2000040677A (ja) | 半導体素子の製造方法 | |
| JPH04223356A (ja) | 半導体装置の製造方法 | |
| CN110104607B (zh) | 一种用于保护mems器件敏感结构的划片方法 | |
| JP2000340527A (ja) | 半導体素子の分離方法 | |
| JPS63237408A (ja) | 半導体デバイス用基板 | |
| CN100530572C (zh) | 晶片级封装的方法 | |
| JPH0831608B2 (ja) | 半導体圧力センサの製造方法 | |
| JPH08316174A (ja) | ガラス付き半導体ウエハの切断方法 | |
| JPS5522838A (en) | Manufacturing method of semiconductor strain gauge type pressure senser chip | |
| JPS58118159A (ja) | 半導体圧力変換器の製造方法 | |
| JP2913724B2 (ja) | 半導体装置の製造方法 |