JPH0412031B2 - - Google Patents

Info

Publication number
JPH0412031B2
JPH0412031B2 JP56180890A JP18089081A JPH0412031B2 JP H0412031 B2 JPH0412031 B2 JP H0412031B2 JP 56180890 A JP56180890 A JP 56180890A JP 18089081 A JP18089081 A JP 18089081A JP H0412031 B2 JPH0412031 B2 JP H0412031B2
Authority
JP
Japan
Prior art keywords
region
stage transistor
type diffusion
emitter
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56180890A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5882562A (ja
Inventor
Hideo Kawasaki
Susumu Sugumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP56180890A priority Critical patent/JPS5882562A/ja
Publication of JPS5882562A publication Critical patent/JPS5882562A/ja
Publication of JPH0412031B2 publication Critical patent/JPH0412031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56180890A 1981-11-10 1981-11-10 半導体装置 Granted JPS5882562A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180890A JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180890A JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS5882562A JPS5882562A (ja) 1983-05-18
JPH0412031B2 true JPH0412031B2 (OSRAM) 1992-03-03

Family

ID=16091115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180890A Granted JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS5882562A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
EP0176753A1 (de) * 1984-09-27 1986-04-09 Siemens Aktiengesellschaft Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
JPS5658260A (en) * 1979-10-16 1981-05-21 Matsushita Electronics Corp Darlington junction type transistor and production thereof

Also Published As

Publication number Publication date
JPS5882562A (ja) 1983-05-18

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