JPS5882562A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5882562A
JPS5882562A JP56180890A JP18089081A JPS5882562A JP S5882562 A JPS5882562 A JP S5882562A JP 56180890 A JP56180890 A JP 56180890A JP 18089081 A JP18089081 A JP 18089081A JP S5882562 A JPS5882562 A JP S5882562A
Authority
JP
Japan
Prior art keywords
region
conductivity type
emitter
base
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56180890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0412031B2 (OSRAM
Inventor
Hideo Kawasaki
川崎　英夫
Susumu Sugumoto
直本　進
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56180890A priority Critical patent/JPS5882562A/ja
Publication of JPS5882562A publication Critical patent/JPS5882562A/ja
Publication of JPH0412031B2 publication Critical patent/JPH0412031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56180890A 1981-11-10 1981-11-10 半導体装置 Granted JPS5882562A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180890A JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180890A JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS5882562A true JPS5882562A (ja) 1983-05-18
JPH0412031B2 JPH0412031B2 (OSRAM) 1992-03-03

Family

ID=16091115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180890A Granted JPS5882562A (ja) 1981-11-10 1981-11-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS5882562A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
US4811074A (en) * 1984-09-27 1989-03-07 Siemens Aktiengesellschaft Darlington circuit comprising a field effect transistor and a bipolar output transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140781A (OSRAM) * 1974-08-02 1976-04-05 Trw Inc
JPS5658260A (en) * 1979-10-16 1981-05-21 Matsushita Electronics Corp Darlington junction type transistor and production thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140781A (OSRAM) * 1974-08-02 1976-04-05 Trw Inc
JPS5658260A (en) * 1979-10-16 1981-05-21 Matsushita Electronics Corp Darlington junction type transistor and production thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
US4811074A (en) * 1984-09-27 1989-03-07 Siemens Aktiengesellschaft Darlington circuit comprising a field effect transistor and a bipolar output transistor

Also Published As

Publication number Publication date
JPH0412031B2 (OSRAM) 1992-03-03

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