JPH0411518B2 - - Google Patents

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Publication number
JPH0411518B2
JPH0411518B2 JP62025301A JP2530187A JPH0411518B2 JP H0411518 B2 JPH0411518 B2 JP H0411518B2 JP 62025301 A JP62025301 A JP 62025301A JP 2530187 A JP2530187 A JP 2530187A JP H0411518 B2 JPH0411518 B2 JP H0411518B2
Authority
JP
Japan
Prior art keywords
crystal
gallium arsenide
resistivity
gaas
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62025301A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63195199A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2530187A priority Critical patent/JPS63195199A/ja
Publication of JPS63195199A publication Critical patent/JPS63195199A/ja
Publication of JPH0411518B2 publication Critical patent/JPH0411518B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2530187A 1987-02-05 1987-02-05 ガリウム砒素結晶の製造方法 Granted JPS63195199A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2530187A JPS63195199A (ja) 1987-02-05 1987-02-05 ガリウム砒素結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2530187A JPS63195199A (ja) 1987-02-05 1987-02-05 ガリウム砒素結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS63195199A JPS63195199A (ja) 1988-08-12
JPH0411518B2 true JPH0411518B2 (enrdf_load_stackoverflow) 1992-02-28

Family

ID=12162192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2530187A Granted JPS63195199A (ja) 1987-02-05 1987-02-05 ガリウム砒素結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS63195199A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269307A (ja) * 1988-09-02 1990-03-08 Nippon Mining Co Ltd リン化インジウムおよびその製造方法
JPH0745360B2 (ja) * 1988-12-28 1995-05-17 株式会社ジャパンエナジー ＩｎＰ単結晶の熱処理方法
JPH03232235A (ja) * 1990-02-08 1991-10-16 Sumitomo Metal Mining Co Ltd ＧａＡｓ化合物半導体単結晶基板の熱処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61151094A (ja) * 1984-12-26 1986-07-09 Agency Of Ind Science & Technol 化合物半導体単結晶の製造方法
JPS61201700A (ja) * 1985-03-05 1986-09-06 Sumitomo Electric Ind Ltd 高抵抗ＧａＡｓ結晶およびその製造方法
JPS61275196A (ja) * 1985-05-29 1986-12-05 Toshiba Corp ＧａＡｓ単結晶の製造方法
JPH07107879B2 (ja) * 1986-07-14 1995-11-15 三菱電機株式会社 荷電粒子装置

Also Published As

Publication number Publication date
JPS63195199A (ja) 1988-08-12

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