JPH0410746B2 - - Google Patents
Info
- Publication number
- JPH0410746B2 JPH0410746B2 JP60033817A JP3381785A JPH0410746B2 JP H0410746 B2 JPH0410746 B2 JP H0410746B2 JP 60033817 A JP60033817 A JP 60033817A JP 3381785 A JP3381785 A JP 3381785A JP H0410746 B2 JPH0410746 B2 JP H0410746B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- film
- polycrystalline silicon
- conductivity type
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 4
- 238000002955 isolation Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- KCBJDDCXBCEDRU-UHFFFAOYSA-N 3,4-dihydro-2h-borole Chemical compound C1CB=CC1 KCBJDDCXBCEDRU-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033817A JPS61194767A (ja) | 1985-02-22 | 1985-02-22 | 相補型ｍｏｓ半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033817A JPS61194767A (ja) | 1985-02-22 | 1985-02-22 | 相補型ｍｏｓ半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194767A JPS61194767A (ja) | 1986-08-29 |
| JPH0410746B2 true JPH0410746B2 (zh) | 1992-02-26 |
Family
ID=12397029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60033817A Granted JPS61194767A (ja) | 1985-02-22 | 1985-02-22 | 相補型ｍｏｓ半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194767A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07112006B2 (ja) * | 1988-05-02 | 1995-11-29 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE3900769A1 (de) * | 1989-01-12 | 1990-08-09 | Fraunhofer Ges Forschung | Integrierte schaltung mit zumindest einem n-kanal-fet und zumindest einem p-kanal-fet |
| JPH0779127B2 (ja) * | 1989-12-27 | 1995-08-23 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113248A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5864044A (ja) * | 1981-10-14 | 1983-04-16 | Toshiba Corp | 半導体装置の製造方法 |
| JPS58197841A (ja) * | 1982-05-14 | 1983-11-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS58220443A (ja) * | 1982-06-16 | 1983-12-22 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5984572A (ja) * | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
-
1985
- 1985-02-22 JP JP60033817A patent/JPS61194767A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113248A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5864044A (ja) * | 1981-10-14 | 1983-04-16 | Toshiba Corp | 半導体装置の製造方法 |
| JPS58197841A (ja) * | 1982-05-14 | 1983-11-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS58220443A (ja) * | 1982-06-16 | 1983-12-22 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5984572A (ja) * | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61194767A (ja) | 1986-08-29 |
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