JPH0379320B2 - - Google Patents

Info

Publication number
JPH0379320B2
JPH0379320B2 JP4560285A JP4560285A JPH0379320B2 JP H0379320 B2 JPH0379320 B2 JP H0379320B2 JP 4560285 A JP4560285 A JP 4560285A JP 4560285 A JP4560285 A JP 4560285A JP H0379320 B2 JPH0379320 B2 JP H0379320B2
Authority
JP
Japan
Prior art keywords
single crystal
melt
crucible
pulling
segregation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4560285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61205691A (ja
Inventor
Sumio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP4560285A priority Critical patent/JPS61205691A/ja
Publication of JPS61205691A publication Critical patent/JPS61205691A/ja
Publication of JPH0379320B2 publication Critical patent/JPH0379320B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4560285A 1985-03-06 1985-03-06 結晶成長方法 Granted JPS61205691A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4560285A JPS61205691A (ja) 1985-03-06 1985-03-06 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4560285A JPS61205691A (ja) 1985-03-06 1985-03-06 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS61205691A JPS61205691A (ja) 1986-09-11
JPH0379320B2 true JPH0379320B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-18

Family

ID=12723898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4560285A Granted JPS61205691A (ja) 1985-03-06 1985-03-06 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS61205691A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252989A (ja) * 1987-04-08 1988-10-20 Sumitomo Electric Ind Ltd 引上法による半導体単結晶の製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JPH0532480A (ja) * 1991-02-20 1993-02-09 Sumitomo Metal Ind Ltd 結晶成長方法
JP2606046B2 (ja) * 1992-04-16 1997-04-30 住友金属工業株式会社 単結晶引き上げ時における単結晶酸素濃度の制御方法
JPH0680495A (ja) * 1992-06-16 1994-03-22 Sumitomo Metal Ind Ltd 結晶成長方法
JPH06263583A (ja) * 1993-03-15 1994-09-20 Sumitomo Sitix Corp 結晶成長方法
JP2640315B2 (ja) * 1993-03-22 1997-08-13 住友シチックス株式会社 シリコン単結晶の製造方法
JPH06279170A (ja) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp 単結晶の製造方法及びその装置
JPH07267776A (ja) * 1994-03-31 1995-10-17 Sumitomo Sitix Corp 結晶成長方法

Also Published As

Publication number Publication date
JPS61205691A (ja) 1986-09-11

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees