JPH0378787B2 - - Google Patents

Info

Publication number
JPH0378787B2
JPH0378787B2 JP59097940A JP9794084A JPH0378787B2 JP H0378787 B2 JPH0378787 B2 JP H0378787B2 JP 59097940 A JP59097940 A JP 59097940A JP 9794084 A JP9794084 A JP 9794084A JP H0378787 B2 JPH0378787 B2 JP H0378787B2
Authority
JP
Japan
Prior art keywords
control transistor
emitter
diffusion layer
semiconductor circuit
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59097940A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60240158A (ja
Inventor
Tatsu Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59097940A priority Critical patent/JPS60240158A/ja
Publication of JPS60240158A publication Critical patent/JPS60240158A/ja
Publication of JPH0378787B2 publication Critical patent/JPH0378787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59097940A 1984-05-14 1984-05-14 半導体回路 Granted JPS60240158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59097940A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097940A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Publications (2)

Publication Number Publication Date
JPS60240158A JPS60240158A (ja) 1985-11-29
JPH0378787B2 true JPH0378787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-16

Family

ID=14205659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097940A Granted JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Country Status (1)

Country Link
JP (1) JPS60240158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5645404B2 (ja) 2006-08-17 2014-12-24 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高電力絶縁ゲート・バイポーラ・トランジスタ
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9478537B2 (en) 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module

Also Published As

Publication number Publication date
JPS60240158A (ja) 1985-11-29

Similar Documents

Publication Publication Date Title
US4567500A (en) Semiconductor structure for protecting integrated circuit devices
JP3146579B2 (ja) プログラマブル過電圧保護回路
JPH04322468A (ja) 過電圧保護回路
US6218709B1 (en) Semiconductor device and semiconductor circuit using the same
JPH0378787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4990978A (en) Semiconductor device
JPH055383B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0654777B2 (ja) ラテラルトランジスタを有する回路
JPS61158175A (ja) プレ−ナ型トランジスタ装置
JPS6211787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3128885B2 (ja) 半導体装置
JP2526960B2 (ja) 導電変調型ｍｏｓｆｅｔ
JPS6410101B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04312968A (ja) Ｃｍｏｓ半導体集積回路装置
EP0607474B1 (en) Semiconductor integrated circuit with layer for isolating elements in substrate
JPH1065112A (ja) 誘導ドライバ回路とその方法
JP2901275B2 (ja) 半導体集積回路装置
JP2833913B2 (ja) バイポーラ集積回路装置
JPS6141247Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3128958B2 (ja) 半導体集積回路
JPS6122867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS58186959A (ja) 半導体装置
KR790000896B1 (ko) 뮤팅 회로
JPS5915215B2 (ja) 誘導負荷駆動用増幅回路
JPH07104743B2 (ja) 電源回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term