JPH0377659B2 - - Google Patents
Info
- Publication number
- JPH0377659B2 JPH0377659B2 JP57228687A JP22868782A JPH0377659B2 JP H0377659 B2 JPH0377659 B2 JP H0377659B2 JP 57228687 A JP57228687 A JP 57228687A JP 22868782 A JP22868782 A JP 22868782A JP H0377659 B2 JPH0377659 B2 JP H0377659B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor substrate
- transparent member
- wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59125621A JPS59125621A (ja) | 1984-07-20 |
| JPH0377659B2 true JPH0377659B2 (enrdf_load_stackoverflow) | 1991-12-11 |
Family
ID=16880226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22868782A Granted JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59125621A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4796081A (en) * | 1986-05-02 | 1989-01-03 | Advanced Micro Devices, Inc. | Low resistance metal contact for silicon devices |
| JP2611434B2 (ja) * | 1989-06-23 | 1997-05-21 | 富士電機株式会社 | ショットキーバリアダイオードの製造方法 |
| SE465100B (sv) * | 1989-06-30 | 1991-07-22 | Inst Mikroelektronik Im | Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva |
| JP2638311B2 (ja) * | 1991-01-10 | 1997-08-06 | 動力炉・核燃料開発事業団 | マイクロ波高電界中における加熱温度測定装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691436A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for heating semiconductor substrate |
| JPS5754315A (en) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPS57178316A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Manufacture of semiconductor element and device therefor |
-
1982
- 1982-12-28 JP JP22868782A patent/JPS59125621A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59125621A (ja) | 1984-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5815396A (en) | Vacuum processing device and film forming device and method using same | |
| US5098198A (en) | Wafer heating and monitor module and method of operation | |
| KR940007608B1 (ko) | 진공처리 장치 및 이를 이용한 성막장치와 성막방법 | |
| US4806321A (en) | Use of infrared radiation and an ellipsoidal reflection mirror | |
| EP0092346B1 (en) | Method and apparatus for heating a semiconductor substrate under reduced pressure | |
| US20030160972A1 (en) | Method and apparatus for measuring thickness of a thin oxide layer | |
| JP3334162B2 (ja) | 真空処理装置及びそれを用いた成膜装置と成膜方法 | |
| US5478609A (en) | Substrate heating mechanism | |
| JP2000286207A (ja) | 熱処理装置及び熱処理方法 | |
| CA1093216A (en) | Silicon device with uniformly thick polysilicon | |
| JPH0377659B2 (enrdf_load_stackoverflow) | ||
| US7550366B2 (en) | Method for bonding substrates and device for bonding substrates | |
| US20230005798A1 (en) | Substrate processing apparatus and substrate processing method | |
| US4228452A (en) | Silicon device with uniformly thick polysilicon | |
| EP0452777B1 (en) | Wafer heating and monitoring system and method of operation | |
| EP0406669A2 (en) | Thin film making method on semiconductor substrate and temperature controlling systems therefor | |
| JPH05283501A (ja) | 半導体製造装置 | |
| JPH029121A (ja) | プラズマエッチング装置 | |
| JP2000216104A (ja) | 気相成長装置と気相成長方法 | |
| JP3351544B2 (ja) | 基板の温度制御方法 | |
| JP2640269B2 (ja) | 処理方法及び処理装置 | |
| JPH0561574B2 (enrdf_load_stackoverflow) | ||
| JPS63125680A (ja) | 気相堆積装置 | |
| JPS59100536A (ja) | マイクロ波処理装置 | |
| JP3244463B2 (ja) | 真空処理装置及びそれを用いた成膜装置と成膜方法 |