JPS59125621A - 半導体製造装置 - Google Patents
半導体製造装置Info
- Publication number
- JPS59125621A JPS59125621A JP22868782A JP22868782A JPS59125621A JP S59125621 A JPS59125621 A JP S59125621A JP 22868782 A JP22868782 A JP 22868782A JP 22868782 A JP22868782 A JP 22868782A JP S59125621 A JPS59125621 A JP S59125621A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- wafer
- temperature
- semiconductor manufacturing
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22868782A JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59125621A true JPS59125621A (ja) | 1984-07-20 |
| JPH0377659B2 JPH0377659B2 (enrdf_load_stackoverflow) | 1991-12-11 |
Family
ID=16880226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22868782A Granted JPS59125621A (ja) | 1982-12-28 | 1982-12-28 | 半導体製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59125621A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283643A (ja) * | 1986-05-02 | 1987-12-09 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | シリコンベースの半導体装置のためのコンタクト構造 |
| JPH0325977A (ja) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | ショットキーバリアダイオードの製造方法 |
| FR2671628A1 (fr) * | 1991-01-10 | 1992-07-17 | Doryokuro Kakunenryo | Appareil pour mesurer la temperature de chauffage dans un champ electrique intense de micro-ondes. |
| US5491112A (en) * | 1989-06-30 | 1996-02-13 | Im Institutet For Mikroelektronik | Method and arrangement for treating silicon plates |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691436A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for heating semiconductor substrate |
| JPS5754315A (en) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPS57178316A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Manufacture of semiconductor element and device therefor |
-
1982
- 1982-12-28 JP JP22868782A patent/JPS59125621A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691436A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for heating semiconductor substrate |
| JPS5754315A (en) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
| JPS57178316A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Manufacture of semiconductor element and device therefor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283643A (ja) * | 1986-05-02 | 1987-12-09 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | シリコンベースの半導体装置のためのコンタクト構造 |
| JPH0325977A (ja) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | ショットキーバリアダイオードの製造方法 |
| US5491112A (en) * | 1989-06-30 | 1996-02-13 | Im Institutet For Mikroelektronik | Method and arrangement for treating silicon plates |
| FR2671628A1 (fr) * | 1991-01-10 | 1992-07-17 | Doryokuro Kakunenryo | Appareil pour mesurer la temperature de chauffage dans un champ electrique intense de micro-ondes. |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0377659B2 (enrdf_load_stackoverflow) | 1991-12-11 |
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