JPH03769B2 - - Google Patents

Info

Publication number
JPH03769B2
JPH03769B2 JP56200315A JP20031581A JPH03769B2 JP H03769 B2 JPH03769 B2 JP H03769B2 JP 56200315 A JP56200315 A JP 56200315A JP 20031581 A JP20031581 A JP 20031581A JP H03769 B2 JPH03769 B2 JP H03769B2
Authority
JP
Japan
Prior art keywords
etching
gas
dry etching
sample
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56200315A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58101429A (ja
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP20031581A priority Critical patent/JPS58101429A/ja
Publication of JPS58101429A publication Critical patent/JPS58101429A/ja
Publication of JPH03769B2 publication Critical patent/JPH03769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP20031581A 1981-12-12 1981-12-12 ドライエツチング方法 Granted JPS58101429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20031581A JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20031581A JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58101429A JPS58101429A (ja) 1983-06-16
JPH03769B2 true JPH03769B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-08

Family

ID=16422259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20031581A Granted JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58101429A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658907B2 (ja) * 1985-06-16 1994-08-03 日本電気株式会社 ガリウムヒ素結晶の気相エツチング方法
JPH02283018A (ja) * 1989-01-31 1990-11-20 Matsushita Electric Ind Co Ltd 半導体基体の処理方法及び半導体の製造方法
JPH02267938A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
JPH02267936A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856598A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-11-22 1973-08-08
JPS5515290A (en) * 1978-07-20 1980-02-02 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS58101429A (ja) 1983-06-16

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