JPH0376589B2 - - Google Patents

Info

Publication number
JPH0376589B2
JPH0376589B2 JP58117610A JP11761083A JPH0376589B2 JP H0376589 B2 JPH0376589 B2 JP H0376589B2 JP 58117610 A JP58117610 A JP 58117610A JP 11761083 A JP11761083 A JP 11761083A JP H0376589 B2 JPH0376589 B2 JP H0376589B2
Authority
JP
Japan
Prior art keywords
layer
metal
transparent
transparent conductive
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58117610A
Other languages
English (en)
Japanese (ja)
Other versions
JPS609167A (ja
Inventor
Kyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58117610A priority Critical patent/JPS609167A/ja
Publication of JPS609167A publication Critical patent/JPS609167A/ja
Publication of JPH0376589B2 publication Critical patent/JPH0376589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58117610A 1983-06-28 1983-06-28 半導体装置およびその製造方法 Granted JPS609167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58117610A JPS609167A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58117610A JPS609167A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS609167A JPS609167A (ja) 1985-01-18
JPH0376589B2 true JPH0376589B2 (enrdf_load_stackoverflow) 1991-12-05

Family

ID=14716018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58117610A Granted JPS609167A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS609167A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0673379B2 (ja) * 1983-11-21 1994-09-14 松下電器産業株式会社 半導体装置およびその製造方法
US5648663A (en) * 1985-08-05 1997-07-15 Canon Kabushiki Kaisha Semiconductor structure having transistor and other elements on a common substrate and process for producing the same
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JPS6484668A (en) * 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
US5210045A (en) * 1987-10-06 1993-05-11 General Electric Company Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays
JP2545175Y2 (ja) * 1988-04-12 1997-08-25 シャープ株式会社 液晶表示装置
JP2778712B2 (ja) * 1988-12-05 1998-07-23 株式会社東芝 薄膜トランジスタアレイ
WO2000054339A1 (en) * 1999-03-10 2000-09-14 Matsushita Electric Industrial Co., Ltd. Thin-film transistor, panel, and methods for producing them

Also Published As

Publication number Publication date
JPS609167A (ja) 1985-01-18

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