JPH0376020B2 - - Google Patents

Info

Publication number
JPH0376020B2
JPH0376020B2 JP57159793A JP15979382A JPH0376020B2 JP H0376020 B2 JPH0376020 B2 JP H0376020B2 JP 57159793 A JP57159793 A JP 57159793A JP 15979382 A JP15979382 A JP 15979382A JP H0376020 B2 JPH0376020 B2 JP H0376020B2
Authority
JP
Japan
Prior art keywords
silicon
film
atom
covalent bond
dangling bonds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57159793A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5948922A (ja
Inventor
Yoshuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP57159793A priority Critical patent/JPS5948922A/ja
Publication of JPS5948922A publication Critical patent/JPS5948922A/ja
Publication of JPH0376020B2 publication Critical patent/JPH0376020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP57159793A 1982-09-14 1982-09-14 非晶質半導体 Granted JPS5948922A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57159793A JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159793A JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Publications (2)

Publication Number Publication Date
JPS5948922A JPS5948922A (ja) 1984-03-21
JPH0376020B2 true JPH0376020B2 (enExample) 1991-12-04

Family

ID=15701384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57159793A Granted JPS5948922A (ja) 1982-09-14 1982-09-14 非晶質半導体

Country Status (1)

Country Link
JP (1) JPS5948922A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224322A (ja) * 1987-03-13 1988-09-19 Sanyo Electric Co Ltd 非晶質シリコンアロイ膜
US5371380A (en) * 1992-04-15 1994-12-06 Canon Kabushiki Kaisha Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511397A (en) * 1979-06-05 1980-01-26 Shunpei Yamazaki Semiconductor device with continuous connection and its production method

Also Published As

Publication number Publication date
JPS5948922A (ja) 1984-03-21

Similar Documents

Publication Publication Date Title
JP2006080557A (ja) 高水素希釈低温プラズマ蒸着によって製造されるアモルファスシリコン系素子の向上せしめられた安定化特性
US5419783A (en) Photovoltaic device and manufacturing method therefor
JPS59972A (ja) 絶縁層を組み込む補償アモルフアス太陽電池
JPH0432551B2 (enExample)
JPH0376020B2 (enExample)
US7038238B1 (en) Semiconductor device having a non-single crystalline semiconductor layer
JP2775460B2 (ja) 非晶質太陽電池の製造方法
JPH08172208A (ja) 超格子装置およびその製造方法
JP3245962B2 (ja) 薄膜太陽電池の製造方法
JP2918815B2 (ja) 光起電力素子及びその製造方法
JPS59101879A (ja) 薄膜太陽電池
JPH088371B2 (ja) 薄膜太陽電池及びその製造方法
JP2644901B2 (ja) ｐｉｎ型アモルファスシリコン太陽電池の製造方法
JP2937815B2 (ja) 光起電力素子及びその製造方法
JP2747110B2 (ja) 積層型アモルファスシリコン太陽電池
JPS59101880A (ja) 薄膜太陽電池
JPH06105794B2 (ja) 炭化珪素半導体作製方法
JPS6284571A (ja) 多層構造型アモルフアス太陽電池
JPH0225078A (ja) 光起電力装置及びその製造方法
JP2966908B2 (ja) 光電変換素子
JPH0815220B2 (ja) 光電変換素子の製造方法
JP2575397B2 (ja) 光電変換素子の製造方法
JPH0519833B2 (enExample)
JPH04321277A (ja) 非晶質シリコン薄膜の形成方法およびこれを用いた光起電力装置の製造方法
JPS60240165A (ja) 非晶質シリコン太陽電池