JPS5948922A - 非晶質半導体 - Google Patents
非晶質半導体Info
- Publication number
- JPS5948922A JPS5948922A JP57159793A JP15979382A JPS5948922A JP S5948922 A JPS5948922 A JP S5948922A JP 57159793 A JP57159793 A JP 57159793A JP 15979382 A JP15979382 A JP 15979382A JP S5948922 A JPS5948922 A JP S5948922A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- group
- amorphous
- semiconductor
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159793A JPS5948922A (ja) | 1982-09-14 | 1982-09-14 | 非晶質半導体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159793A JPS5948922A (ja) | 1982-09-14 | 1982-09-14 | 非晶質半導体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5948922A true JPS5948922A (ja) | 1984-03-21 |
| JPH0376020B2 JPH0376020B2 (enExample) | 1991-12-04 |
Family
ID=15701384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57159793A Granted JPS5948922A (ja) | 1982-09-14 | 1982-09-14 | 非晶質半導体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5948922A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224322A (ja) * | 1987-03-13 | 1988-09-19 | Sanyo Electric Co Ltd | 非晶質シリコンアロイ膜 |
| US5371380A (en) * | 1992-04-15 | 1994-12-06 | Canon Kabushiki Kaisha | Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less |
| JP2010067801A (ja) * | 2008-09-11 | 2010-03-25 | Seiko Epson Corp | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5511397A (en) * | 1979-06-05 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device with continuous connection and its production method |
-
1982
- 1982-09-14 JP JP57159793A patent/JPS5948922A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5511397A (en) * | 1979-06-05 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device with continuous connection and its production method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224322A (ja) * | 1987-03-13 | 1988-09-19 | Sanyo Electric Co Ltd | 非晶質シリコンアロイ膜 |
| US5371380A (en) * | 1992-04-15 | 1994-12-06 | Canon Kabushiki Kaisha | Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less |
| JP2010067801A (ja) * | 2008-09-11 | 2010-03-25 | Seiko Epson Corp | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0376020B2 (enExample) | 1991-12-04 |
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