JPH0359587B2 - - Google Patents
Info
- Publication number
- JPH0359587B2 JPH0359587B2 JP56123660A JP12366081A JPH0359587B2 JP H0359587 B2 JPH0359587 B2 JP H0359587B2 JP 56123660 A JP56123660 A JP 56123660A JP 12366081 A JP12366081 A JP 12366081A JP H0359587 B2 JPH0359587 B2 JP H0359587B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- intrinsic
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56123660A JPS5825282A (ja) | 1981-08-07 | 1981-08-07 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56123660A JPS5825282A (ja) | 1981-08-07 | 1981-08-07 | 光電変換装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4193008A Division JP2700282B2 (ja) | 1992-06-26 | 1992-06-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5825282A JPS5825282A (ja) | 1983-02-15 |
| JPH0359587B2 true JPH0359587B2 (enExample) | 1991-09-11 |
Family
ID=14866120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56123660A Granted JPS5825282A (ja) | 1981-08-07 | 1981-08-07 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5825282A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| US5954148A (en) * | 1995-10-18 | 1999-09-21 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Crawler apparatus for vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54163693A (en) * | 1978-10-23 | 1979-12-26 | Yamazaki Shunpei | Semiconductor device for photovoltaic power generation |
| JPS55124272A (en) * | 1979-03-19 | 1980-09-25 | Shunpei Yamazaki | Semiconductor device and method of fabricating the same |
-
1981
- 1981-08-07 JP JP56123660A patent/JPS5825282A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5825282A (ja) | 1983-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9099585B2 (en) | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys | |
| US4409605A (en) | Amorphous semiconductors equivalent to crystalline semiconductors | |
| US4398343A (en) | Method of making semi-amorphous semiconductor device | |
| US4520380A (en) | Amorphous semiconductors equivalent to crystalline semiconductors | |
| US5391893A (en) | Nonsingle crystal semiconductor and a semiconductor device using such semiconductor | |
| US4710786A (en) | Wide band gap semiconductor alloy material | |
| US20100210060A1 (en) | Double anneal process for an improved rapid thermal oxide passivated solar cell | |
| JPS58155774A (ja) | 半導体装置 | |
| EP0066787B1 (en) | Process for preparing amorphous silicon semiconductor | |
| TW201308635A (zh) | 具有改良式通道接合之串列太陽能電池 | |
| US4839312A (en) | Fluorinated precursors from which to fabricate amorphous semiconductor material | |
| JPH0432551B2 (enExample) | ||
| JPH0359587B2 (enExample) | ||
| US7038238B1 (en) | Semiconductor device having a non-single crystalline semiconductor layer | |
| JP2692964B2 (ja) | 太陽電池 | |
| JP2700282B2 (ja) | 半導体装置 | |
| JPS5825281A (ja) | 半導体装置 | |
| JPS58161380A (ja) | 半導体装置 | |
| JPH0652799B2 (ja) | 半導体装置 | |
| JPS5853869A (ja) | 光電変換装置作製方法 | |
| JPS62232173A (ja) | アモルフアスシリコン太陽電池 | |
| JP2626653B2 (ja) | 珪素半導体装置 | |
| Burte et al. | Inversion layer solar cells on chemically vapor‐deposited polycrystalline silicon thin films | |
| Kamiya et al. | High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas and their transport properties | |
| JPH0554272B2 (enExample) |