JPH0573334B2 - - Google Patents

Info

Publication number
JPH0573334B2
JPH0573334B2 JP63134140A JP13414088A JPH0573334B2 JP H0573334 B2 JPH0573334 B2 JP H0573334B2 JP 63134140 A JP63134140 A JP 63134140A JP 13414088 A JP13414088 A JP 13414088A JP H0573334 B2 JPH0573334 B2 JP H0573334B2
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
silicon nitride
deposited
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63134140A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01303716A (ja
Inventor
Yutaka Hayashi
Mitsuyuki Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63134140A priority Critical patent/JPH01303716A/ja
Publication of JPH01303716A publication Critical patent/JPH01303716A/ja
Publication of JPH0573334B2 publication Critical patent/JPH0573334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP63134140A 1988-05-31 1988-05-31 薄膜形成方法 Granted JPH01303716A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63134140A JPH01303716A (ja) 1988-05-31 1988-05-31 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63134140A JPH01303716A (ja) 1988-05-31 1988-05-31 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPH01303716A JPH01303716A (ja) 1989-12-07
JPH0573334B2 true JPH0573334B2 (enExample) 1993-10-14

Family

ID=15121408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63134140A Granted JPH01303716A (ja) 1988-05-31 1988-05-31 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPH01303716A (enExample)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102560A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH0652741B2 (ja) * 1982-06-02 1994-07-06 松下電器産業株式会社 絶縁ゲート型トランジスタの製造方法
JPS5919378A (ja) * 1982-07-23 1984-01-31 Matsushita Electric Ind Co Ltd 絶縁ゲート型トランジスタの製造方法
JPS617669A (ja) * 1984-06-21 1986-01-14 Matsushita Electric Ind Co Ltd 光導電体の製造方法
JPS6254478A (ja) * 1985-08-24 1987-03-10 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS6411368A (en) * 1987-07-03 1989-01-13 Nec Corp Manufacture of thin film transistor

Also Published As

Publication number Publication date
JPH01303716A (ja) 1989-12-07

Similar Documents

Publication Publication Date Title
US4196438A (en) Article and device having an amorphous silicon containing a halogen and method of fabrication
US4520380A (en) Amorphous semiconductors equivalent to crystalline semiconductors
US4710786A (en) Wide band gap semiconductor alloy material
US4749588A (en) Process for producing hydrogenated amorphous silicon thin film and a solar cell
US4703336A (en) Photodetection and current control devices
JP3623520B2 (ja) 薄膜太陽電池の製法
JP2003188400A (ja) 結晶性SiC膜の製造方法、結晶性SiC膜及び太陽電池
JPH0573334B2 (enExample)
US5264710A (en) Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals
JPH0691010B2 (ja) 非晶質薄膜の製法
JPS6316914B2 (enExample)
JP2742799B2 (ja) 半導体薄膜の形成方法
JPH0821546B2 (ja) 薄膜の製造方法
JPS5935016A (ja) 含水素シリコン層の製造方法
JP3040247B2 (ja) シリコン薄膜の製造法
JP2723548B2 (ja) 炭素含有シリコン微結晶薄膜の形成法
EP0137043B1 (en) Method of manufacturing hydrogenated amorphous silicon thin film and solar cell
JP2543498B2 (ja) 半導体薄膜
JPS61278132A (ja) 水素化アモルフアスSiGe膜の形成方法
JPS5948922A (ja) 非晶質半導体
JPS63283119A (ja) 非晶質半導体、非晶質半導体装置およびそれらの製法
JPS6041453B2 (ja) 微結晶化非晶質シリコン膜の生成方法
JPH0370389B2 (enExample)
JP3046644B2 (ja) 光起電力素子の製造方法
JPH0714072B2 (ja) 光電変換素子の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term