JPH01303716A - 薄膜形成方法 - Google Patents
薄膜形成方法Info
- Publication number
- JPH01303716A JPH01303716A JP63134140A JP13414088A JPH01303716A JP H01303716 A JPH01303716 A JP H01303716A JP 63134140 A JP63134140 A JP 63134140A JP 13414088 A JP13414088 A JP 13414088A JP H01303716 A JPH01303716 A JP H01303716A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon nitride
- thin film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000010408 film Substances 0.000 claims abstract description 83
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 45
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims 6
- 230000003287 optical effect Effects 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910006160 GeF4 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- -1 and in this example Chemical compound 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63134140A JPH01303716A (ja) | 1988-05-31 | 1988-05-31 | 薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63134140A JPH01303716A (ja) | 1988-05-31 | 1988-05-31 | 薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01303716A true JPH01303716A (ja) | 1989-12-07 |
| JPH0573334B2 JPH0573334B2 (enExample) | 1993-10-14 |
Family
ID=15121408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63134140A Granted JPH01303716A (ja) | 1988-05-31 | 1988-05-31 | 薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01303716A (enExample) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102560A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| JPS58212177A (ja) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲ−ト型トランジスタおよびその製造方法 |
| JPS5919378A (ja) * | 1982-07-23 | 1984-01-31 | Matsushita Electric Ind Co Ltd | 絶縁ゲート型トランジスタの製造方法 |
| JPS617669A (ja) * | 1984-06-21 | 1986-01-14 | Matsushita Electric Ind Co Ltd | 光導電体の製造方法 |
| JPS6254478A (ja) * | 1985-08-24 | 1987-03-10 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPS6411368A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Manufacture of thin film transistor |
-
1988
- 1988-05-31 JP JP63134140A patent/JPH01303716A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102560A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| JPS58212177A (ja) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | 絶縁ゲ−ト型トランジスタおよびその製造方法 |
| JPS5919378A (ja) * | 1982-07-23 | 1984-01-31 | Matsushita Electric Ind Co Ltd | 絶縁ゲート型トランジスタの製造方法 |
| JPS617669A (ja) * | 1984-06-21 | 1986-01-14 | Matsushita Electric Ind Co Ltd | 光導電体の製造方法 |
| JPS6254478A (ja) * | 1985-08-24 | 1987-03-10 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPS6411368A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Manufacture of thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573334B2 (enExample) | 1993-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |