JPH0373133B2 - - Google Patents
Info
- Publication number
- JPH0373133B2 JPH0373133B2 JP14881782A JP14881782A JPH0373133B2 JP H0373133 B2 JPH0373133 B2 JP H0373133B2 JP 14881782 A JP14881782 A JP 14881782A JP 14881782 A JP14881782 A JP 14881782A JP H0373133 B2 JPH0373133 B2 JP H0373133B2
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing equipment
- semiconductor manufacturing
- oxygen gas
- cleaning
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 230000003749 cleanliness Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14881782A JPS5939029A (ja) | 1982-08-27 | 1982-08-27 | 半導体製造装置の清浄化方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14881782A JPS5939029A (ja) | 1982-08-27 | 1982-08-27 | 半導体製造装置の清浄化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5939029A JPS5939029A (ja) | 1984-03-03 |
| JPH0373133B2 true JPH0373133B2 (enExample) | 1991-11-20 |
Family
ID=15461375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14881782A Granted JPS5939029A (ja) | 1982-08-27 | 1982-08-27 | 半導体製造装置の清浄化方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939029A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0234910A (ja) * | 1988-07-25 | 1990-02-05 | Nec Kansai Ltd | 化合物半導体気相成長方法 |
| JPH02214121A (ja) * | 1989-02-15 | 1990-08-27 | Toshiba Ceramics Co Ltd | 半導体用ＳｉＣ質治具等のクリーニング方法 |
| JP2698298B2 (ja) * | 1992-09-28 | 1998-01-19 | 松下電子工業株式会社 | 熱処理炉の炉心管のトリクロルエタンクリーニング方法 |
-
1982
- 1982-08-27 JP JP14881782A patent/JPS5939029A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5939029A (ja) | 1984-03-03 |
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