JPS5939029A - 半導体製造装置の清浄化方法 - Google Patents

半導体製造装置の清浄化方法

Info

Publication number
JPS5939029A
JPS5939029A JP14881782A JP14881782A JPS5939029A JP S5939029 A JPS5939029 A JP S5939029A JP 14881782 A JP14881782 A JP 14881782A JP 14881782 A JP14881782 A JP 14881782A JP S5939029 A JPS5939029 A JP S5939029A
Authority
JP
Japan
Prior art keywords
oxygen gas
semiconductor manufacturing
semiconductor
gas
hydrochloric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14881782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373133B2 (enExample
Inventor
Kiichi Kono
河野　喜一
Hidetoshi Yada
矢田　英俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14881782A priority Critical patent/JPS5939029A/ja
Publication of JPS5939029A publication Critical patent/JPS5939029A/ja
Publication of JPH0373133B2 publication Critical patent/JPH0373133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP14881782A 1982-08-27 1982-08-27 半導体製造装置の清浄化方法 Granted JPS5939029A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14881782A JPS5939029A (ja) 1982-08-27 1982-08-27 半導体製造装置の清浄化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14881782A JPS5939029A (ja) 1982-08-27 1982-08-27 半導体製造装置の清浄化方法

Publications (2)

Publication Number Publication Date
JPS5939029A true JPS5939029A (ja) 1984-03-03
JPH0373133B2 JPH0373133B2 (enExample) 1991-11-20

Family

ID=15461375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14881782A Granted JPS5939029A (ja) 1982-08-27 1982-08-27 半導体製造装置の清浄化方法

Country Status (1)

Country Link
JP (1) JPS5939029A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234910A (ja) * 1988-07-25 1990-02-05 Nec Kansai Ltd 化合物半導体気相成長方法
JPH02214121A (ja) * 1989-02-15 1990-08-27 Toshiba Ceramics Co Ltd 半導体用ＳｉＣ質治具等のクリーニング方法
JPH06112145A (ja) * 1992-09-28 1994-04-22 Matsushita Electron Corp 熱処理炉の炉心管のトリクロルエタンクリーニング方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234910A (ja) * 1988-07-25 1990-02-05 Nec Kansai Ltd 化合物半導体気相成長方法
JPH02214121A (ja) * 1989-02-15 1990-08-27 Toshiba Ceramics Co Ltd 半導体用ＳｉＣ質治具等のクリーニング方法
JPH06112145A (ja) * 1992-09-28 1994-04-22 Matsushita Electron Corp 熱処理炉の炉心管のトリクロルエタンクリーニング方法

Also Published As

Publication number Publication date
JPH0373133B2 (enExample) 1991-11-20

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