JPH0373101B2 - - Google Patents
Info
- Publication number
- JPH0373101B2 JPH0373101B2 JP61012105A JP1210586A JPH0373101B2 JP H0373101 B2 JPH0373101 B2 JP H0373101B2 JP 61012105 A JP61012105 A JP 61012105A JP 1210586 A JP1210586 A JP 1210586A JP H0373101 B2 JPH0373101 B2 JP H0373101B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- electrode
- plasma
- gas
- extraction window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000605 extraction Methods 0.000 claims description 61
- 239000012528 membrane Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 74
- 239000002245 particle Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012105A JPS62172648A (ja) | 1986-01-24 | 1986-01-24 | Ｘ線発生装置 |
| US06/857,112 US4771447A (en) | 1985-04-30 | 1986-04-29 | X-ray source |
| DE86105914T DE3688946T2 (de) | 1985-04-30 | 1986-04-29 | Röntgenstrahlungsquelle. |
| EP86105914A EP0201034B1 (en) | 1985-04-30 | 1986-04-29 | X-ray source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012105A JPS62172648A (ja) | 1986-01-24 | 1986-01-24 | Ｘ線発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62172648A JPS62172648A (ja) | 1987-07-29 |
| JPH0373101B2 true JPH0373101B2 (ko) | 1991-11-20 |
Family
ID=11796285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61012105A Granted JPS62172648A (ja) | 1985-04-30 | 1986-01-24 | Ｘ線発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62172648A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19962160C2 (de) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung |
| WO2006056917A1 (en) * | 2004-11-29 | 2006-06-01 | Philips Intellectual Property & Standards Gmbh | Method and apparatus for generating radiation in the wavelength range from about 1 nm to about 30 nm, and use in a lithography device or in metrology |
| DE102004058500A1 (de) * | 2004-12-04 | 2006-06-08 | Philips Intellectual Property & Standards Gmbh | Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung |
| JP4628122B2 (ja) * | 2005-02-04 | 2011-02-09 | 株式会社小松製作所 | 極端紫外光源装置用ノズル |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61200695A (ja) * | 1985-02-27 | 1986-09-05 | マツクスウエル・ラボラトリ−ズ・インコ−ポレ−テツド | 軟ｘ線を発生する装置 |
-
1986
- 1986-01-24 JP JP61012105A patent/JPS62172648A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61200695A (ja) * | 1985-02-27 | 1986-09-05 | マツクスウエル・ラボラトリ−ズ・インコ−ポレ−テツド | 軟ｘ線を発生する装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62172648A (ja) | 1987-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |