JPH0370879B2 - - Google Patents

Info

Publication number
JPH0370879B2
JPH0370879B2 JP56073246A JP7324681A JPH0370879B2 JP H0370879 B2 JPH0370879 B2 JP H0370879B2 JP 56073246 A JP56073246 A JP 56073246A JP 7324681 A JP7324681 A JP 7324681A JP H0370879 B2 JPH0370879 B2 JP H0370879B2
Authority
JP
Japan
Prior art keywords
voltage
gate electrode
floating gate
memory
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56073246A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57189391A (en
Inventor
Yutaka Hayashi
Yoshikazu Kojima
Masaaki Kamya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Epson Corp filed Critical Agency of Industrial Science and Technology
Priority to JP7324681A priority Critical patent/JPS57189391A/ja
Publication of JPS57189391A publication Critical patent/JPS57189391A/ja
Publication of JPH0370879B2 publication Critical patent/JPH0370879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP7324681A 1981-05-15 1981-05-15 Nonvolatile semiconductor memory integrated circuit Granted JPS57189391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7324681A JPS57189391A (en) 1981-05-15 1981-05-15 Nonvolatile semiconductor memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7324681A JPS57189391A (en) 1981-05-15 1981-05-15 Nonvolatile semiconductor memory integrated circuit

Publications (2)

Publication Number Publication Date
JPS57189391A JPS57189391A (en) 1982-11-20
JPH0370879B2 true JPH0370879B2 (enrdf_load_stackoverflow) 1991-11-11

Family

ID=13512628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7324681A Granted JPS57189391A (en) 1981-05-15 1981-05-15 Nonvolatile semiconductor memory integrated circuit

Country Status (1)

Country Link
JP (1) JPS57189391A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
US5511021A (en) * 1995-02-22 1996-04-23 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple levels of data that utilizes a forward-biased source-to-substrate junction

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536937A (en) * 1978-09-04 1980-03-14 Nec Corp Nonvolatile semiconductor storage unit

Also Published As

Publication number Publication date
JPS57189391A (en) 1982-11-20

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