JPH0369880B2 - - Google Patents

Info

Publication number
JPH0369880B2
JPH0369880B2 JP61014232A JP1423286A JPH0369880B2 JP H0369880 B2 JPH0369880 B2 JP H0369880B2 JP 61014232 A JP61014232 A JP 61014232A JP 1423286 A JP1423286 A JP 1423286A JP H0369880 B2 JPH0369880 B2 JP H0369880B2
Authority
JP
Japan
Prior art keywords
crystal growth
temperature
zone
ampoule
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61014232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62172000A (ja
Inventor
Tomoji Yamagami
Yoshitaka Tomomura
Masahiko Kitagawa
Shigeo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1423286A priority Critical patent/JPS62172000A/ja
Publication of JPS62172000A publication Critical patent/JPS62172000A/ja
Publication of JPH0369880B2 publication Critical patent/JPH0369880B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1423286A 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法 Granted JPS62172000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1423286A JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1423286A JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Publications (2)

Publication Number Publication Date
JPS62172000A JPS62172000A (ja) 1987-07-28
JPH0369880B2 true JPH0369880B2 (cs) 1991-11-05

Family

ID=11855325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1423286A Granted JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Country Status (1)

Country Link
JP (1) JPS62172000A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009024473B4 (de) * 2009-06-10 2015-11-26 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium und danach hergestellter Einkristall

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (cs) * 1973-04-04 1974-12-12
JPS59164695A (ja) * 1983-03-10 1984-09-17 Matsushita Electric Ind Co Ltd 単結晶の製造方法

Also Published As

Publication number Publication date
JPS62172000A (ja) 1987-07-28

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