JPS62172000A - ２−６族化合物の単結晶成長法 - Google Patents

２−６族化合物の単結晶成長法

Info

Publication number
JPS62172000A
JPS62172000A JP1423286A JP1423286A JPS62172000A JP S62172000 A JPS62172000 A JP S62172000A JP 1423286 A JP1423286 A JP 1423286A JP 1423286 A JP1423286 A JP 1423286A JP S62172000 A JPS62172000 A JP S62172000A
Authority
JP
Japan
Prior art keywords
crystal growth
ampoule
temperature
growth
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1423286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369880B2 (cs
Inventor
Tomoji Yamagami
山上　智司
Yoshitaka Tomomura
好隆 友村
Masahiko Kitagawa
雅彦 北川
Shigeo Nakajima
中島　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1423286A priority Critical patent/JPS62172000A/ja
Publication of JPS62172000A publication Critical patent/JPS62172000A/ja
Publication of JPH0369880B2 publication Critical patent/JPH0369880B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1423286A 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法 Granted JPS62172000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1423286A JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1423286A JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Publications (2)

Publication Number Publication Date
JPS62172000A true JPS62172000A (ja) 1987-07-28
JPH0369880B2 JPH0369880B2 (cs) 1991-11-05

Family

ID=11855325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1423286A Granted JPS62172000A (ja) 1986-01-24 1986-01-24 ２−６族化合物の単結晶成長法

Country Status (1)

Country Link
JP (1) JPS62172000A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101922041A (zh) * 2009-06-10 2010-12-22 硅电子股份公司 硅单晶的拉制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (cs) * 1973-04-04 1974-12-12
JPS59164695A (ja) * 1983-03-10 1984-09-17 Matsushita Electric Ind Co Ltd 単結晶の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (cs) * 1973-04-04 1974-12-12
JPS59164695A (ja) * 1983-03-10 1984-09-17 Matsushita Electric Ind Co Ltd 単結晶の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101922041A (zh) * 2009-06-10 2010-12-22 硅电子股份公司 硅单晶的拉制方法

Also Published As

Publication number Publication date
JPH0369880B2 (cs) 1991-11-05

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