JPH0367346B2 - - Google Patents

Info

Publication number
JPH0367346B2
JPH0367346B2 JP59014633A JP1463384A JPH0367346B2 JP H0367346 B2 JPH0367346 B2 JP H0367346B2 JP 59014633 A JP59014633 A JP 59014633A JP 1463384 A JP1463384 A JP 1463384A JP H0367346 B2 JPH0367346 B2 JP H0367346B2
Authority
JP
Japan
Prior art keywords
film
insulating film
electrode
insulating
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59014633A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60160155A (ja
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59014633A priority Critical patent/JPS60160155A/ja
Publication of JPS60160155A publication Critical patent/JPS60160155A/ja
Publication of JPH0367346B2 publication Critical patent/JPH0367346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP59014633A 1984-01-30 1984-01-30 半導体装置の製造方法 Granted JPS60160155A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59014633A JPS60160155A (ja) 1984-01-30 1984-01-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59014633A JPS60160155A (ja) 1984-01-30 1984-01-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60160155A JPS60160155A (ja) 1985-08-21
JPH0367346B2 true JPH0367346B2 (enrdf_load_stackoverflow) 1991-10-22

Family

ID=11866596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59014633A Granted JPS60160155A (ja) 1984-01-30 1984-01-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60160155A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754846B2 (ja) * 1985-11-29 1995-06-07 株式会社日立製作所 キャパシタの製造方法
JPS6380969U (enrdf_load_stackoverflow) * 1986-11-17 1988-05-27
US4943012A (en) * 1987-02-09 1990-07-24 Ryobi Ltd. Double bearing fishing reel
JPH04359557A (ja) * 1991-06-06 1992-12-11 Nec Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107838A (ja) * 1983-11-17 1985-06-13 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60160155A (ja) 1985-08-21

Similar Documents

Publication Publication Date Title
US4959745A (en) Capacitor and method for producing the same
US6118146A (en) Microelectronic capacitors having tantalum pentoxide dielectrics
US6075691A (en) Thin film capacitors and process for making them
US4432035A (en) Method of making high dielectric constant insulators and capacitors using same
JPH0855967A (ja) 強誘電体薄膜キャパシタの製造方法
JPS60153158A (ja) キャパシタ誘電体膜の製造方法
US5569619A (en) Method for forming a capacitor of a semiconductor memory cell
JPH0367346B2 (enrdf_load_stackoverflow)
US20010055821A1 (en) Method of manufacturing a capacitor having tantalum oxide film as an insulating film
JPS60182155A (ja) 容量の形成方法
US6238932B1 (en) Method for fabricating reliable multilayer bottom electrode for ferroelectric capacitors
JPS60107838A (ja) 半導体装置の製造方法
JPH01154547A (ja) 容量の製造方法
JPS6262472B2 (enrdf_load_stackoverflow)
JP3316848B2 (ja) 酸化タンタル膜を用いたキャパシタ構造の製造方法
JP2001077309A (ja) キャパシタ及びその製造方法
JPS605531A (ja) 絶縁膜の形成方法
JP2000307069A (ja) 半導体装置の製造方法
JPH0652774B2 (ja) 薄膜キャパシタ
JPH06204430A (ja) 誘電体薄膜の製造方法
JP3420098B2 (ja) 半導体装置の製造方法
JPS6364895B2 (enrdf_load_stackoverflow)
JP2776115B2 (ja) 薄膜コンデンサ及びその製造方法
JPS59188957A (ja) 半導体装置用キヤパシタの製造方法
JPH0689984A (ja) 半導体装置の製造方法