JPH0365016B2 - - Google Patents
Info
- Publication number
- JPH0365016B2 JPH0365016B2 JP57113253A JP11325382A JPH0365016B2 JP H0365016 B2 JPH0365016 B2 JP H0365016B2 JP 57113253 A JP57113253 A JP 57113253A JP 11325382 A JP11325382 A JP 11325382A JP H0365016 B2 JPH0365016 B2 JP H0365016B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- via hole
- semiconductor substrate
- capacitor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000005669 field effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57113253A JPS594175A (ja) | 1982-06-30 | 1982-06-30 | 電界効果半導体装置 |
EP19830303769 EP0098167B1 (en) | 1982-06-30 | 1983-06-29 | A field-effect semiconductor device |
DE8383303769T DE3377960D1 (en) | 1982-06-30 | 1983-06-29 | A field-effect semiconductor device |
US07/105,472 US4751562A (en) | 1982-06-30 | 1987-09-30 | Field-effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57113253A JPS594175A (ja) | 1982-06-30 | 1982-06-30 | 電界効果半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS594175A JPS594175A (ja) | 1984-01-10 |
JPH0365016B2 true JPH0365016B2 (US06534493-20030318-C00166.png) | 1991-10-09 |
Family
ID=14607458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57113253A Granted JPS594175A (ja) | 1982-06-30 | 1982-06-30 | 電界効果半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4751562A (US06534493-20030318-C00166.png) |
JP (1) | JPS594175A (US06534493-20030318-C00166.png) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4807022A (en) * | 1987-05-01 | 1989-02-21 | Raytheon Company | Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits |
US4970578A (en) * | 1987-05-01 | 1990-11-13 | Raytheon Company | Selective backside plating of GaAs monolithic microwave integrated circuits |
JPH0273664A (ja) * | 1988-09-08 | 1990-03-13 | Nec Corp | 電界効果トランジスタ |
US4937660A (en) * | 1988-12-21 | 1990-06-26 | At&T Bell Laboratories | Silicon-based mounting structure for semiconductor optical devices |
JPH02257643A (ja) * | 1989-03-29 | 1990-10-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US4974039A (en) * | 1989-08-14 | 1990-11-27 | Raytheon Company | Field effect transistor having an integrated capacitor |
US5319237A (en) * | 1990-03-09 | 1994-06-07 | Thomson Composants Microondes | Power semiconductor component |
FR2697698A1 (fr) * | 1992-11-04 | 1994-05-06 | Philips Electronique Lab | Dispositif semiconducteur comprenant un circuit amplificateur distribué monolithiquement intégré, à large bande et fort gain. |
DE19851458C2 (de) * | 1998-11-09 | 2000-11-16 | Bosch Gmbh Robert | Monolithisch integrierte Schaltung mit mehreren, einen Nebenschluß nach Masse bildenden Kapazitäten und Verstärkerschaltung |
CA2342175A1 (en) * | 1999-06-30 | 2001-01-11 | Kazuhiko Nakahara | Microwave amplifier |
EP1085572A3 (en) * | 1999-09-16 | 2006-04-19 | Texas Instruments Incorporated | Low pass filter integral with semiconductor package |
US6538300B1 (en) * | 2000-09-14 | 2003-03-25 | Vishay Intertechnology, Inc. | Precision high-frequency capacitor formed on semiconductor substrate |
US7151036B1 (en) * | 2002-07-29 | 2006-12-19 | Vishay-Siliconix | Precision high-frequency capacitor formed on semiconductor substrate |
WO2004064159A1 (ja) * | 2003-01-15 | 2004-07-29 | Fujitsu Limited | 半導体装置及び三次元実装半導体装置、並びに半導体装置の製造方法 |
US7199039B2 (en) * | 2003-05-19 | 2007-04-03 | Intel Corporation | Interconnect routing over semiconductor for editing through the back side of an integrated circuit |
US20050034075A1 (en) * | 2003-06-05 | 2005-02-10 | Ch2M Hill, Inc. | GIS-based emergency management |
JP4353861B2 (ja) | 2004-06-30 | 2009-10-28 | Necエレクトロニクス株式会社 | 半導体装置 |
FI20051236A0 (fi) * | 2005-12-01 | 2005-12-01 | Artto Mikael Aurola | Puolijohde apparaatti |
US7557036B2 (en) * | 2006-03-30 | 2009-07-07 | Intel Corporation | Method, system, and apparatus for filling vias |
CN101473433B (zh) * | 2006-06-20 | 2011-12-07 | Nxp股份有限公司 | 功率放大器装置 |
KR101096041B1 (ko) * | 2009-12-10 | 2011-12-19 | 주식회사 하이닉스반도체 | 반도체 패키지 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104265A (en) * | 1980-12-19 | 1982-06-29 | Fujitsu Ltd | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3969745A (en) * | 1974-09-18 | 1976-07-13 | Texas Instruments Incorporated | Interconnection in multi element planar structures |
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
US4183041A (en) * | 1978-06-26 | 1980-01-08 | Rca Corporation | Self biasing of a field effect transistor mounted in a flip-chip carrier |
US4456888A (en) * | 1981-03-26 | 1984-06-26 | Raytheon Company | Radio frequency network having plural electrically interconnected field effect transistor cells |
-
1982
- 1982-06-30 JP JP57113253A patent/JPS594175A/ja active Granted
-
1987
- 1987-09-30 US US07/105,472 patent/US4751562A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104265A (en) * | 1980-12-19 | 1982-06-29 | Fujitsu Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US4751562A (en) | 1988-06-14 |
JPS594175A (ja) | 1984-01-10 |
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