JPH0362014B2 - - Google Patents

Info

Publication number
JPH0362014B2
JPH0362014B2 JP58192748A JP19274883A JPH0362014B2 JP H0362014 B2 JPH0362014 B2 JP H0362014B2 JP 58192748 A JP58192748 A JP 58192748A JP 19274883 A JP19274883 A JP 19274883A JP H0362014 B2 JPH0362014 B2 JP H0362014B2
Authority
JP
Japan
Prior art keywords
layer
base layer
emitter
internal base
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58192748A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60160164A (ja
Inventor
Hideshi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP58192748A priority Critical patent/JPS60160164A/ja
Publication of JPS60160164A publication Critical patent/JPS60160164A/ja
Publication of JPH0362014B2 publication Critical patent/JPH0362014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58192748A 1983-10-15 1983-10-15 半導体装置およびその製造方法 Granted JPS60160164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58192748A JPS60160164A (ja) 1983-10-15 1983-10-15 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58192748A JPS60160164A (ja) 1983-10-15 1983-10-15 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS60160164A JPS60160164A (ja) 1985-08-21
JPH0362014B2 true JPH0362014B2 (en, 2012) 1991-09-24

Family

ID=16296393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58192748A Granted JPS60160164A (ja) 1983-10-15 1983-10-15 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS60160164A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52151570A (en) * 1976-06-11 1977-12-16 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5835971A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 半導体装置の製造方法
JPS5878457A (ja) * 1981-11-05 1983-05-12 Hitachi Ltd 半導体装置の製造方法
JPS59217363A (ja) * 1983-05-25 1984-12-07 Hitachi Ltd バイポ−ラ型半導体装置の製造方法
JPS6021568A (ja) * 1983-07-15 1985-02-02 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60160164A (ja) 1985-08-21

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