JPH0361637B2 - - Google Patents
Info
- Publication number
- JPH0361637B2 JPH0361637B2 JP7656384A JP7656384A JPH0361637B2 JP H0361637 B2 JPH0361637 B2 JP H0361637B2 JP 7656384 A JP7656384 A JP 7656384A JP 7656384 A JP7656384 A JP 7656384A JP H0361637 B2 JPH0361637 B2 JP H0361637B2
- Authority
- JP
- Japan
- Prior art keywords
- ascl
- light
- source
- gaas
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 238000006722 reduction reaction Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910017009 AsCl3 Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656384A JPS60221393A (ja) | 1984-04-18 | 1984-04-18 | ＧａＡｓ単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7656384A JPS60221393A (ja) | 1984-04-18 | 1984-04-18 | ＧａＡｓ単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60221393A JPS60221393A (ja) | 1985-11-06 |
| JPH0361637B2 true JPH0361637B2 (enrdf_load_stackoverflow) | 1991-09-20 |
Family
ID=13608707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7656384A Granted JPS60221393A (ja) | 1984-04-18 | 1984-04-18 | ＧａＡｓ単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60221393A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0630339B2 (ja) * | 1984-07-16 | 1994-04-20 | 新技術事業団 | ＧａＡｓ単結晶の製造方法 |
| JP2743970B2 (ja) * | 1988-03-19 | 1998-04-28 | 住友電気工業株式会社 | 化合物半導体の分子線エピタキシャル成長法 |
-
1984
- 1984-04-18 JP JP7656384A patent/JPS60221393A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60221393A (ja) | 1985-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |