JPH0361303B2 - - Google Patents

Info

Publication number
JPH0361303B2
JPH0361303B2 JP56124169A JP12416981A JPH0361303B2 JP H0361303 B2 JPH0361303 B2 JP H0361303B2 JP 56124169 A JP56124169 A JP 56124169A JP 12416981 A JP12416981 A JP 12416981A JP H0361303 B2 JPH0361303 B2 JP H0361303B2
Authority
JP
Japan
Prior art keywords
substrate
electrode
ion beam
cylindrical structure
secondary electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56124169A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5826441A (ja
Inventor
Masahiro Yoshizawa
Masayasu Myake
Michuki Harada
Satoshi Tazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56124169A priority Critical patent/JPS5826441A/ja
Publication of JPS5826441A publication Critical patent/JPS5826441A/ja
Publication of JPH0361303B2 publication Critical patent/JPH0361303B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP56124169A 1981-08-10 1981-08-10 イオン注入装置 Granted JPS5826441A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56124169A JPS5826441A (ja) 1981-08-10 1981-08-10 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56124169A JPS5826441A (ja) 1981-08-10 1981-08-10 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS5826441A JPS5826441A (ja) 1983-02-16
JPH0361303B2 true JPH0361303B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-19

Family

ID=14878654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56124169A Granted JPS5826441A (ja) 1981-08-10 1981-08-10 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS5826441A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109570A (ja) * 1999-12-06 2012-06-07 Varian Semiconductor Equipment Associates Inc プラズマドーピングシステムのためのドーズ量モニター

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871546A (ja) * 1981-10-23 1983-04-28 Fujitsu Ltd イオン注入装置
EP0104818A3 (en) * 1982-09-29 1985-10-23 Eaton Corporation Ion implantation device
JPS61106808A (ja) * 1984-10-29 1986-05-24 神鋼鋼線工業株式会社 ケ−ブルの架設方法
JPS62154447A (ja) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk ウエハ−の帯電抑制装置
JPH0654649B2 (ja) * 1987-05-29 1994-07-20 東京エレクトロン株式会社 イオン注入装置
JPS63304826A (ja) * 1987-06-01 1988-12-13 Kajima Corp 地盤アンカ−頭部の定着方法
JP2527666Y2 (ja) * 1990-04-27 1997-03-05 日新電機株式会社 イオン注入装置
JPH0745231A (ja) * 1992-09-07 1995-02-14 Applied Materials Japan Kk イオン注入方法および装置
US5498290A (en) * 1993-08-27 1996-03-12 Hughes Aircraft Company Confinement of secondary electrons in plasma ion processing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109570A (ja) * 1999-12-06 2012-06-07 Varian Semiconductor Equipment Associates Inc プラズマドーピングシステムのためのドーズ量モニター

Also Published As

Publication number Publication date
JPS5826441A (ja) 1983-02-16

Similar Documents

Publication Publication Date Title
KR0170394B1 (ko) 이온 주입장치
US4786814A (en) Method of reducing electrostatic charge on ion-implanted devices
KR100318872B1 (ko) 이온빔주입기및이온빔지향방법
JPH0361303B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4014772A (en) Method of radiation hardening semiconductor devices
US5293508A (en) Ion implanter and controlling method therefor
KR100514174B1 (ko) 이온빔 조사방법 및 관련방법 및 장치
JP3460242B2 (ja) 負イオン注入装置
JPH0378740B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0223021B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2805795B2 (ja) イオンビーム照射装置
JP3399230B2 (ja) イオン照射装置
JP3001163B2 (ja) イオン処理装置
JP2663564B2 (ja) イオンビーム照射装置
JP2616423B2 (ja) イオン注入装置
King et al. A method of surface charge neutralization during ion implantation
JPH0754918Y2 (ja) エレクトロンシャワー装置
JPH0654649B2 (ja) イオン注入装置
JPH0628715Y2 (ja) 電子エネルギー分布測定装置
JPH0782830B2 (ja) 電荷中和装置
JPH05190134A (ja) イオン注入装置およびその注入方法
JPH05205646A (ja) イオン注入装置
JPH0815065B2 (ja) 半導体装置のイオン注入装置及びその注入方法
JPS6310454A (ja) イオン注入装置における帯電防止装置
JPH0432568A (ja) イオン処理装置