JPH0355978B2 - - Google Patents
Info
- Publication number
- JPH0355978B2 JPH0355978B2 JP57111939A JP11193982A JPH0355978B2 JP H0355978 B2 JPH0355978 B2 JP H0355978B2 JP 57111939 A JP57111939 A JP 57111939A JP 11193982 A JP11193982 A JP 11193982A JP H0355978 B2 JPH0355978 B2 JP H0355978B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- semiconductor layer
- electron
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111939A JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111939A JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593977A JPS593977A (ja) | 1984-01-10 |
| JPH0355978B2 true JPH0355978B2 (enEXAMPLES) | 1991-08-27 |
Family
ID=14573923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111939A Granted JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593977A (enEXAMPLES) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030177A (ja) * | 1983-07-28 | 1985-02-15 | Nec Corp | 半導体装置 |
| JPH0789584B2 (ja) * | 1984-12-19 | 1995-09-27 | 日本電気株式会社 | 半導体装置 |
| JPH0789585B2 (ja) * | 1984-12-28 | 1995-09-27 | 日本電気株式会社 | 半導体装置 |
| JPS63134555U (enEXAMPLES) * | 1987-02-24 | 1988-09-02 | ||
| JP3019862B2 (ja) * | 1989-03-14 | 2000-03-13 | 松下電子工業株式会社 | 電界効果トランジスタ |
| JP4755922B2 (ja) * | 2006-02-27 | 2011-08-24 | 日野自動車株式会社 | ドア構造 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS551122A (en) * | 1978-06-16 | 1980-01-07 | Mitsubishi Electric Corp | Field-effect transistor |
| JPS5953714B2 (ja) * | 1979-12-28 | 1984-12-26 | 富士通株式会社 | 半導体装置 |
| JPS6312392A (ja) * | 1986-07-02 | 1988-01-19 | Matsushita Electric Ind Co Ltd | 濾過器 |
-
1982
- 1982-06-29 JP JP57111939A patent/JPS593977A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS593977A (ja) | 1984-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890003379B1 (ko) | 화합물 반도체 집적회로장치 | |
| JPH0435904B2 (enEXAMPLES) | ||
| KR900000208B1 (ko) | N-채널 및 p-채널 트랜지스터들을 포함하는 반도체장치 및 그의 제조방법 | |
| KR920003799B1 (ko) | 반도체 장치 | |
| JPH0324782B2 (enEXAMPLES) | ||
| JP2689057B2 (ja) | 静電誘導型半導体装置 | |
| JPH0355978B2 (enEXAMPLES) | ||
| JPS6086872A (ja) | 半導体装置 | |
| JPS59100577A (ja) | 半導体装置 | |
| US5107314A (en) | Gallium antimonide field-effect transistor | |
| JPS61147577A (ja) | 相補型半導体装置 | |
| JPH07273311A (ja) | 帯域対帯域共振トンネリング・トランジスタ | |
| JPH0468775B2 (enEXAMPLES) | ||
| JP2703885B2 (ja) | 半導体装置 | |
| JPH0371774B2 (enEXAMPLES) | ||
| JPH07142508A (ja) | 電界効果型素子とその製造方法 | |
| KR910006698B1 (ko) | 반도체 장치 | |
| JP3054216B2 (ja) | 半導体装置 | |
| JP2708492B2 (ja) | 半導体装置の製造方法 | |
| JP2655594B2 (ja) | 集積型半導体装置 | |
| JP2834172B2 (ja) | 電界効果トランジスタ | |
| JPS62209864A (ja) | 半導体装置 | |
| JPH0131314B2 (enEXAMPLES) | ||
| JPH0797633B2 (ja) | 電界効果トランジスタ | |
| JPH0210747A (ja) | 半導体集積装置及びその製造方法 |