JPS593977A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS593977A JPS593977A JP57111939A JP11193982A JPS593977A JP S593977 A JPS593977 A JP S593977A JP 57111939 A JP57111939 A JP 57111939A JP 11193982 A JP11193982 A JP 11193982A JP S593977 A JPS593977 A JP S593977A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- gate electrode
- electron
- surface control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111939A JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111939A JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593977A true JPS593977A (ja) | 1984-01-10 |
| JPH0355978B2 JPH0355978B2 (enEXAMPLES) | 1991-08-27 |
Family
ID=14573923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111939A Granted JPS593977A (ja) | 1982-06-29 | 1982-06-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593977A (enEXAMPLES) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030177A (ja) * | 1983-07-28 | 1985-02-15 | Nec Corp | 半導体装置 |
| JPS61144881A (ja) * | 1984-12-19 | 1986-07-02 | Nec Corp | 半導体装置 |
| JPS61156888A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
| JPS63134555U (enEXAMPLES) * | 1987-02-24 | 1988-09-02 | ||
| JPH02240937A (ja) * | 1989-03-14 | 1990-09-25 | Matsushita Electron Corp | 電界効果トランジスタ |
| JP2007223562A (ja) * | 2006-02-27 | 2007-09-06 | Hino Motors Ltd | ドア構造 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS551122A (en) * | 1978-06-16 | 1980-01-07 | Mitsubishi Electric Corp | Field-effect transistor |
| JPS5694780A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
| JPS6312392A (ja) * | 1986-07-02 | 1988-01-19 | Matsushita Electric Ind Co Ltd | 濾過器 |
-
1982
- 1982-06-29 JP JP57111939A patent/JPS593977A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS551122A (en) * | 1978-06-16 | 1980-01-07 | Mitsubishi Electric Corp | Field-effect transistor |
| JPS5694780A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
| JPS6312392A (ja) * | 1986-07-02 | 1988-01-19 | Matsushita Electric Ind Co Ltd | 濾過器 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030177A (ja) * | 1983-07-28 | 1985-02-15 | Nec Corp | 半導体装置 |
| JPS61144881A (ja) * | 1984-12-19 | 1986-07-02 | Nec Corp | 半導体装置 |
| JPS61156888A (ja) * | 1984-12-28 | 1986-07-16 | Nec Corp | 半導体装置 |
| JPS63134555U (enEXAMPLES) * | 1987-02-24 | 1988-09-02 | ||
| JPH02240937A (ja) * | 1989-03-14 | 1990-09-25 | Matsushita Electron Corp | 電界効果トランジスタ |
| JP2007223562A (ja) * | 2006-02-27 | 2007-09-06 | Hino Motors Ltd | ドア構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0355978B2 (enEXAMPLES) | 1991-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1220876A (en) | High electron mobility semiconductor device employing selectively doped heterojunction | |
| US5001536A (en) | Semiconductor device | |
| EP0256363A1 (en) | AlGaAs/GaAs complementary IC structure | |
| JPH03775B2 (enEXAMPLES) | ||
| EP0051271B1 (en) | Heterojunction semiconductor device | |
| KR920003799B1 (ko) | 반도체 장치 | |
| US4559547A (en) | Semiconductor device | |
| JPS593977A (ja) | 半導体装置 | |
| US4771324A (en) | Heterojunction field effect device having an implanted region within a device channel | |
| JPS6356710B2 (enEXAMPLES) | ||
| JPH0732247B2 (ja) | 半導体装置 | |
| JPS5851575A (ja) | 半導体装置の製造方法 | |
| JPS59100577A (ja) | 半導体装置 | |
| US5107314A (en) | Gallium antimonide field-effect transistor | |
| JPH0468775B2 (enEXAMPLES) | ||
| JPS61176160A (ja) | 電界効果トランジスタ | |
| JPH0371774B2 (enEXAMPLES) | ||
| KR910006698B1 (ko) | 반도체 장치 | |
| GB2239557A (en) | High electron mobility transistors | |
| JP2708492B2 (ja) | 半導体装置の製造方法 | |
| JPS6235677A (ja) | 反転型高電子移動度トランジスタ装置 | |
| JPH01257372A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JPS60134480A (ja) | 半導体装置 | |
| JPS63240075A (ja) | 半導体装置の製造方法 | |
| JPH0210747A (ja) | 半導体集積装置及びその製造方法 |